2023
DOI: 10.1021/acsanm.2c05320
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Thickness-Controlled Growth of Multilayer Graphene on Ni(111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

Abstract: Thickness-controlled multilayer graphene has been attracting wide interest in electronic and spintronic devices due to its tunable electronic structure and spin transport properties. In particular, the strong spin filtering effect in a lattice-matched Ni(111)/multilayer graphene heterostructure provides an ideal platform for developing high-performance spin valves and magnetic tunnel junctions. However, the thickness-controlled synthesis of multilayer graphene on Ni(111) substrates is still a large challenge, … Show more

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Cited by 4 publications
(1 citation statement)
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“…Therefore, constructing hardware-based neuromorphic computing systems based on neuromorphic devices through emulating the structural characteristics of BNNs is an efficacious approach to break the limitations imposed by von Neumann bottleneck, and realize high-efficiency and low-energy data processing. Various kind of neuromorphic devices, including memristors [129][130][131][132][133], transistors [51,[134][135][136][137][138][139], memtransistor [140][141][142][143][144][145][146], spintronic devices [147][148][149][150][151], and phase-change memory [152][153][154][155][156][157] had been developed. Memristor and neuromorphic transistor are two most common devices for mimicking the synaptic behaviors.…”
Section: Neuromorphic Devicesmentioning
confidence: 99%
“…Therefore, constructing hardware-based neuromorphic computing systems based on neuromorphic devices through emulating the structural characteristics of BNNs is an efficacious approach to break the limitations imposed by von Neumann bottleneck, and realize high-efficiency and low-energy data processing. Various kind of neuromorphic devices, including memristors [129][130][131][132][133], transistors [51,[134][135][136][137][138][139], memtransistor [140][141][142][143][144][145][146], spintronic devices [147][148][149][150][151], and phase-change memory [152][153][154][155][156][157] had been developed. Memristor and neuromorphic transistor are two most common devices for mimicking the synaptic behaviors.…”
Section: Neuromorphic Devicesmentioning
confidence: 99%