Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films

Experimental observations of a peculiar behavior observed on heating and cooling Sb 2 Te 3 films at different heating and cooling rate are detailed. The film regained its original resistance, forming a closed loop, on the completion of the heating-cooling cycle which was reproducible for identical conditions of heating and cooling. The area enclosed by the loop was found to depend on (i) the thickness of the film, (ii) the heating rate, (iii) the maximum temperature to which film was heated and (iv) the cooling rate. The observations are explained on basis of model which considers the film to be a resultant of parallel resistances. The film's finite thermal conductivity gives rise to a temperature gradient along the thickness of the film, due to this and the temperature coefficient of resistance, the parallel combination of resistance changes with temperature. Difference in heating and cooling rates give different temperature gradient, which explains the observed hysteresis.

show abstract

Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1−x)2Te3 films

Frari

Diliberto

Stein

et al. 2005

Thin Solid Films

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films

Cited by 7 publications

References 25 publications

Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

Occurrence of hysteresis-like behavior of resistance of film in the dynamical measurement of heating–cooling cycle

Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1−x)2Te3 films

Contact Info

Product

Resources

About