Thick film Au-gate field-effect devices sensitive to NO2

Filippini, Daniel; Fraigi, L.; Aragón, R.

doi:10.1016/s0925-4005(01)00969-8

Cited by 20 publications

(12 citation statements)

References 14 publications

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“…It is apparent that the response sign reversals observed in some thick film devices 10 are not circumscribed to impure Au gates as surmised initially 10 but instead constitute features inherent to the depletion regime. The relative paucity of such events is due to the standard operating parameters which optimize response at substantial bias, usually above V T .…”

Section: Discussionmentioning

confidence: 96%

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Lombardi

Aragón

2008

Journal of Applied Physics

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NO 2 sensitive Au gate metal-oxide-semiconductor capacitorsEffects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metaloxide-semiconductor capacitors Current oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy J.Conditions for reversal of the voltage shift in chemically sensitive metal oxide semiconductor capacitors are surveyed with the pulsed illumination technique in Si/ SiO 2 / Me 0 capacitors, with annular Pd and Au gates under controlled H 2 in N 2 and NO 2 in synthetic air stimuli, respectively. The polarity of the response is bias dependent. Above the threshold voltage, negative voltage shifts ensue from positive charges accumulated on the gate-dielectric interface for donor stimuli such as H 2 , whereas positive shifts indicate negative charge accumulation for acceptors such as NO 2 . Below the threshold voltage, the necessary charge compensation can be satisfied by proportional changes in the semiconductor-gate interface state population, which induce chemical shifts of opposite polarity.

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Section: Discussionmentioning

confidence: 96%

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Lombardi

Aragón

2008

Journal of Applied Physics

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“…Investigators have also studied other SMO films such as SnO 2 [103,115-126], ZnO [127-134], Te-oxide [135,136], Mo [137], gold [107], Pt [108], copper [138], and indium oxides [111,112]. Tin oxide thin films deposited onto different substrates such as Pyrex glass, Corning 7059 glass, and fused quartz showed a resistance change in the presence of 500 ppm of NO 2 toxic gas at a working temperature of 350 °C and a sensitivity threshold of about 5 ppm at the same temperature [139].…”

Section: Applications In Environmental Monitoring and Gas Detectionmentioning

confidence: 99%

“…WO 3 -based mixed oxides have also been investigated for their sensing characteristics. Modified materials include WO 3 -Ti [ 99 - 101 ], WO 3 -Pd, Pt, or Au [ 102 - 106 ], WO 3 -In 2 O 3 [ 107 ], and WO 3 -Bi 2 O 3 [ 108 ] which were used to fabricate selective and sensitive NOx gas sensors. For instance, sensors prepared based on semiconducting thin films of Ti, W, and Mo mixed oxides showed that the thin films had good sensing performances and the sensors were able to detect concentrations below the limit for environmental monitoring (CO, NO 2 ) and breath analyzers (ethanol) [ 101 ].…”

Section: Applications In Environmental Monitoring and Gas Detectionmentioning

confidence: 99%

Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

Kanan

El‐Kadri

Abu‐Yousef

et al. 2009

Sensors

389

210

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“…Au‐based metal‐silicon oxide‐silicon (MOS) structures have been used in various devices, such as transistors, capacitors, solar cells, and gas sensors . Chemical reactions at the metal‐silicon oxide interface affect the operational stability and the electronic properties of MOS devices .…”

Section: Introductionmentioning

confidence: 99%

Chemical inhomogeneity of SiO_x dissociation by catalytic Au at a relatively low temperature

Sharma

Lee

Ihm

2016

Surface & Interface Analysis

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Sporadic catalytic decomposition because of the presence of Au grains is a significant issue to be clarified in electronic devices. Here, we report the inhomogeneous dissociation of native silicon oxide depending on the electronic structure of Au grains using scanning photoelectron microscopy. Upon annealing, the oxygen atoms dissociated from native SiO x layer out-diffuses in nonuniform manner, resulting in oxidize the Au layer. Valence band spectra showed that the spit-orbit splitting, directly related to the coordination number, differs from site to site. Scanning photoelectron microscopy images show that dissociated SiO x coincides with the regions where low-coordinated Au resides. These results imply that Au with low coordination number activated the dissociation of SiO x and open new pathway to remove undesirable oxide layer at relatively low temperature. 2 ), contrasted by the intensities of the Si 2p 3/2 level from neutral Si (E B = 99.7 eV), of the sample (d) before and (e) after annealing at 500°C for 1 h. (f) SPEM image of the annealed sample, contrasted by intensity ratios of the oxidized Si 2p 3/2 (E B = 103.5 eV) to the Si 2p 3/2 (E B = 99.7 eV) from neutral silicon atoms. [Colour figure can be viewed at wileyonlinelibrary.com]

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Thick film Au-gate field-effect devices sensitive to NO2

Cited by 20 publications

References 14 publications

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

Chemical inhomogeneity of SiO_x dissociation by catalytic Au at a relatively low temperature

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Thick film Au-gate field-effect devices sensitive to NO2

Cited by 20 publications

References 14 publications

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

Chemical inhomogeneity of SiOx dissociation by catalytic Au at a relatively low temperature

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Chemical inhomogeneity of SiO_x dissociation by catalytic Au at a relatively low temperature