“…Consequently, the bias dependence of the photocurrent u, is not merely displaced along the voltage abscissa by chemical stimulation, but altered instead, to intersect at the threshold voltage (V T ). Total device capacitance, in terms of the fixed dielectric (C 0 ) in series with the parallel circuit of bias dependent semiconductor (C D ) and interface state capacitances (C SS ), modeled across the gate window by a distributed capacitive-resistive network, in accordance with the lateral current model [11,13,16], is…”