Thick Epitaxial YIG Films with Narrow FMR Linewidth

Syvorotka, I.I.; Syvorotka, I.I.; Ubizskii, S.

doi:10.4028/www.scientific.net/ssp.200.250

Cited by 15 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(iv) Liquid phase epitaxy (LPE) from high-temperature solutions (flux melts), is a wellestablished technique. Since nucleation and crystal growth take place under almost thermodynamic equilibrium conditions, this guarantees high quality with respect to narrow absolute FMR linewidths and a small Gilbert damping coefficient [43][44][45] at the same time, making LPE comparable or superior to the other growth techniques. In addition, LPE allows YIG to be deposited in the required quality on 3-or 4-inch wafers [46].…”

Section: Introductionmentioning

confidence: 99%

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Dubs

Surzhenko

Thomas

et al. 2020

Phys. Rev. Materials

View full text Add to dashboard Cite

The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can deliver perfect, homogeneous large-diameter films is still lacking. We report that liquid phase epitaxy (LPE) enables the deposition of nanometer-thin YIG films with low ferromagnetic resonance losses and consistently high magnetic quality down to a thickness of 20 nm. The obtained epitaxial films are characterized by an ideal stoichiometry and perfect film lattices, which show neither significant compositional strain nor geometric mosaicity, but sharp interfaces. Their magneto-static and dynamic behavior is similar to that of single crystalline bulk YIG. We found, that the Gilbert damping coefficient α is independent of the film thickness and close to 1 × 10 -4 , and that together with an inhomogeneous peak-to-peak linewidth broadening of ∆H 0|| = 0.4 G, these values are among the lowest ever reported for YIG films with a thickness smaller than 40 nm. These results suggest, that nanometer-thin LPE films can be used to fabricate nano-and micro-scaled circuits with the required quality for magnonic devices. The LPE technique is easily scalable to YIG sample diameters of several inches.

show abstract

Section: Introductionmentioning

confidence: 99%

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Dubs

Surzhenko

Thomas

et al. 2020

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…The growth process of the YIG‐based films by LPE and the choice of mole ratios (Blank–Nielsen coefficients) are described in detail in Ref. [3].…”

Section: Methodsmentioning

confidence: 99%

“…The liquid‐phase epitaxy (LPE) of single crystalline layers with the garnet structure is one of the most widely used technologies for obtaining functional materials for magnetoelectronics, integrated optics, luminescent and scintillation applications, etc. [ 1–5 ]…”

Section: Introductionmentioning

confidence: 99%

“…Formation of the interface in traditional LPE technology associated with Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 (YIG/GGG) garnet structures [ 1,3,5 ] occurs in the first moments of growth due to: etching by solution‐melt (usually based on PbO‐B 2 O 3 flux) of GGG substrate's surfaces, mutual incorporation of gadolinium and gallium ions into the growing YIG film, and, in contrary, yttrium and iron ions into the substrate. Because the process of growing is sufficiently long (from minutes to tens of hours depending on width of epitaxial layer) and occurs at relatively high temperatures (900…1000 °С), the continuous mutual interdiffusion of ions can take place during the growth of the film.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Syvorotka

Sugak

Yakhnevych

et al. 2022

Crystal Research and Technology

View full text Add to dashboard Cite

The changes in the optical, structural, mechanical properties, and chemical composition of Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 (YIG/GGG) single crystal structures grown by liquid phase epitaxy, particularly at the interface between the film (Y 3 Fe 5 O 12 ) and the substrate (Gd 3 Ga 5 O 12 ), are studied. Different complementary techniques, including optical microscopy, local spectrophotometry, electron probe microanalysis, micro-Raman spectroscopy, and nanohardness analysis are used. The main finding of the study is an experimental approach, in which the probe of the measuring device (light beam, electron beam, nanoindenter) is directed to the surface of the studied sample in a direction perpendicular to the direction of structure growth, and the surface is scanned along this direction. It allows to obtain the profiles of changes in refractive properties, nanohardness, optical absorption, chemical composition, and intensity of phonon spectrum bands at the transition from the GGG to YIG. It is established that the lengths of the scanning intervals, at which the changes of various properties of a specimen occur, differ significantly. The obtained results are affected by the size of the probes and by the sensitivities of both the particular measuring method and the particular physical property of the material to changes in the chemical composition and crystalline structure of the sample.

show abstract

“…Using the found growthstrategy parameters, the La:YIG films with thickness up to 130 µm were successfully grown. [9] Based on thick YIG films, many devices have been reported. In 1987, Yoshikazu et al [10] used La:YIG (40 µm) to fabricate a tunable stripline band pass filter: when the bias field was between 1910 Oe and 3160 Oe, the centre frequency changed from 0.5 GHz to 4.0 GHz.…”

Section: Yig Thick Films (1 µMmentioning

confidence: 99%

Liquid phase epitaxy magnetic garnet films and their applications

Rao¹,

Zhang²,

Yang³

et al. 2018

Chinese Phys. B

View full text Add to dashboard Cite

Liquid phase epitaxy (LPE) is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale (about 100 nm), which was considered to be impossible for LPE method.

show abstract

Thick Epitaxial YIG Films with Narrow FMR Linewidth

Cited by 15 publications

References 6 publications

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Liquid phase epitaxy magnetic garnet films and their applications

Contact Info

Product

Resources

About

Thick Epitaxial YIG Films with Narrow FMR Linewidth

Cited by 15 publications

References 6 publications

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Investigation of the Interface of Y3Fe5O12/Gd3Ga5O12 Structure Obtained by the Liquid Phase Epitaxy

Liquid phase epitaxy magnetic garnet films and their applications

Contact Info

Product

Resources

About

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy