Thick CVD diamond films grown on high-quality type IIa HPHT diamond substrates from New Diamond Technology

Tallaire, Alexandre; Mille, V.; Brinza, Ovidiu; Thi, Thu Nhi Tran; Brom, J. M.; Loguinov, Y.; Katrusha, A. N.; Koliadin, A. V.; Achard, Jocelyn

doi:10.1016/j.diamond.2017.07.002

Cited by 47 publications

(28 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Other impurities may also be incorporated in significant amounts including solvents from the melted baths (Ni and Co) or element contaminations (B, Si, Ge) which can lead to the appearance of specific defects or colouring [73]. Around 50 ppm of boron have been measured in some of the purest type IIa diamonds [74]. Boron is known to stabilize the neutral charge state of NV centres and is usually not desirable (see part 4.4).…”

Section: Hpht Grown Diamondsmentioning

confidence: 99%

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Achard¹,

Jacques²,

Tallaire³

2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Diamond is a host for a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. The plasma assisted Chemical Vapour Deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly in-situ doped into a high crystalline quality diamond matrix in a controlled way allowing the production of single isolated centres or ensembles that can potentially be integrated into a device.In this paper we will provide an overview on the requirements for synthesizing "quantum-grade" diamond films by CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to position diamond as one of the most promising solid-state quantum system and the first industrial applications in sensing are just starting to emerge.

show abstract

Section: Hpht Grown Diamondsmentioning

confidence: 99%

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Achard¹,

Jacques²,

Tallaire³

2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Suppressing the defects in diamonds is key for using diamonds in next‐generation semiconductor devices, thus motivating research on the basic theory of chemical vapor deposition (CVD) single‐crystal growth diamonds. Currently, research on the basic theory of CVD diamond growth is mainly focused on the growth mechanism of CVD single‐crystal diamonds, nitrogen doping, and its influence on the growth rate of single‐crystal diamonds, and controlling defects in single‐crystal diamonds …”

Section: Introductionmentioning

confidence: 99%

Relationship between Birefringence and Surface Morphology in Single‐Crystal Diamonds Grown by MPCVD

Yun

Guo

Lin

et al. 2018

Crystal Research and Technology

View full text Add to dashboard Cite

Single-crystal diamonds are successfully synthesized using microwave plasma chemical vapor deposition. A smooth and flat single-crystal surface is obtained by optimizing the size relationship between the seed substrate and the square hole of the shielding ring. When the sample grows higher than the polycrystalline diamond on the molybdenum holder, the surface becomes uneven. The polarization characteristics of two kinds of chemical vapor deposition (CVD) layers are compared between flat and uneven surfaces. Abnormal high-order birefringence occurs in both morphologies, which is related to the dislocation density in the CVD layers. The higher the dislocation density of the sample, the more obvious the high-order anomalous birefringence. High-pressure high-temperature seed substrates have obvious defects, such as dislocations, stacking faults, and boundaries of the growth sector, and these defects are mostly distributed at the edge of seed substrates. When the diamond surface demonstrates an edge-to-center morphology, the dislocations in the seed substrate, interface-induced dislocations, and dislocations formed in the growth layer begin to converge toward the central region of the CVD layer, which results in a smaller area of low stress in the center of the CVD layer. High dislocation density causes the crystal to have a mosaic structure and orientation deviation.

show abstract

“…Related to the enlargement of single‐crystal diamond using CVD technique, many studies and developments have been undertaken to meet demands for substrates used to manufacture semiconductor devices . Mokuno et al used a lift‐off method to develop a 10‐mm‐square self‐standing single‐crystal diamond film manufactured from a high‐pressure/high‐temperature (HP/HT) type Ib substrate.…”

Section: Introductionmentioning

confidence: 99%

Substrate Effects on Charge Carrier Transport Properties of Single‐Crystal CVD Diamonds and an 8 mm Square Radiation Energy Spectrometer

Hirano

Kaneko

Hanada

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

In an effort to enlarge a sensitive area of a diamond radiation energy spectrometer, a self‐standing chemical vapor deposition (CVD) single crystal is grown on an 8‐mm‐square “general grade” CVD single‐crystal diamond substrate fabricated by Element Six Ltd. The growth conditions that achieved a μτ product of 3 × 10−4 cm2 V−1 for holes in a CVD single‐crystal diamond grown on a high‐pressure and high‐temperature (HP/HT) type IIa single‐crystal diamond substrate elsewhere are adopted. The charge collection efficiency (CCE) of 99.9% for both charge carriers, and 0.39% and 0.5% of energy resolution for holes and electrons are achieved using 5.486 MeV alpha particles. Uniformity of the energy resolution is sufficient for the use of a radiation energy spectrometer. However, μτ products of (5.0 ± 0.4) × 10−5 and (1.8 ± 0.2) × 10−5 cm2 V−1 for holes and electrons are obtained, respectively. These values are approximately one order of magnitude smaller than the μτ products of the CVD single crystal grown on a HP/HT type IIa diamond substrate using the same growth conditions.

show abstract

Thick CVD diamond films grown on high-quality type IIa HPHT diamond substrates from New Diamond Technology

Cited by 47 publications

References 30 publications

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Relationship between Birefringence and Surface Morphology in Single‐Crystal Diamonds Grown by MPCVD

Substrate Effects on Charge Carrier Transport Properties of Single‐Crystal CVD Diamonds and an 8 mm Square Radiation Energy Spectrometer

Contact Info

Product

Resources

About