As a novel scintillation material, the use of Ce-doped Gd 2 Si 2 O 7 was investigated. In fact, (Gd 0.9 Ce 0.1 ) 2 Si 2 O 7 powder showed about five-times greater light output than Gd 2 SiO 5 (GSO) powder samples for alpha-particles from 241 Am. Furthermore, a fast decay constant of 59 ns was obtained for alpha-particles from 241 Am. Relations between the Ce-concentration, crystal structure and luminescence characteristics were also elucidated. Results of these studies show that heavy Ce-doping alters the Gd 2 Si 2 O 7 crystal structure and that the luminescence intensity is dependent not on Ce-concentration but on the triclinic structure formed by heavy Ce-doping.
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