Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

Saidov, M. S.; Saidov, A. S.; Usmonov, Sh. N.; Amonov, K. A.

doi:10.3103/s0003701x0904015x

Cited by 6 publications

(2 citation statements)

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“…To this end, the proposed combination of subjective and an objective element may ensure that there is the necessary flexibility 'to accommodate a variety of factual settings and, at the same time, […] still have a discernible content'. 84…”

Section: A the Reasonable Person Standardmentioning

confidence: 99%

Understanding Claim Proximity in the Eu Regime of Jurisdiction Agreements

Winkler¹

2020

ICLQ

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The Brussels I Recast Regulation entitles business actors to agree on which court(s) will have jurisdiction but restricts the effectiveness of such jurisdiction agreements to disputes ‘which have arisen, or which may arise, in connection with a particular legal relationship’. This article fills a gap in the academic literature by examining the content and implications of this necessary connection (proximity) between the claim and the legal relationship between the parties. First, it characterises claim proximity as a question of party autonomy by distinguishing it from the subject matter of the jurisdiction agreement, which is an issue of contract interpretation. Second, it scrutinises the foreseeability test which has been frequently used by the CJEU in order to determine claim proximity, highlighting its main operational aspects. Building on both theoretical considerations and some cases where the foreseeability test has been used by domestic courts, this article provides clarifications about the scope, the proper functioning and the limits of such a test in order to raise awareness regarding the difficulties that may arise in its use in court to determine claim proximity and therefore assess jurisdiction.

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Section: A the Reasonable Person Standardmentioning

confidence: 99%

Understanding Claim Proximity in the Eu Regime of Jurisdiction Agreements

Winkler¹

2020

ICLQ

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“…There are various methods for obtaining such heterostructures: liquid-phase epitaxy (LPE) [10,11], molecular-beam epitaxy (MBE) [12,13], and metalorganic chemical vapour deposition (MOCVD) [14][15][16]. All these methods are aimed at the creation of heterostructures forming the basis of chips for quantum electronics devices.…”

Section: Introductionmentioning

confidence: 99%

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Васильев

Изотов

et al. 2021

kcmf

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The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of <111>, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

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