Thermostability of physical properties of cadmium telluride crystals

Savitsky, A.V.; Ілащук, М. І.; Parfenyuk, O. A.; Ulyanytsky, K. S.; Burachek, V. R.; Ciach, R.; Świątek, Z.; Kuznicki, Z.T.

doi:10.1016/s0040-6090(99)00794-4

Cited by 18 publications

(13 citation statements)

References 10 publications

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“…The critical analysis of published papers allows the assertation that Ge in CdTe produces deep level at E v + (0.6-0.65) eV [2,11], and Pb-at E v + (0.38-0.43) eV [12]. Very similar positions of such levels were found by other authors [15][16][17][18].…”

Section: Electric Propertiessupporting

confidence: 54%

“…It indicates an insignificant influence of small Zn content (x = 0.04) on the individual behaviour of the impurities-elements from the group IV. It was noted that Ge and Pb impurities demonstrate a compensating and sta- bilising influence on Cd 1−x Zn x Te (x = 0.04) lattice, as well as on the CdTe lattice [2,11]. There are disagreements between published papers, concerning location of deep levels which are produced in CdTe by doping with IVA group elements.…”

Section: Electric Propertiesmentioning

confidence: 99%

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Electrical and magnetic properties of Cd1−Zn Te crystals

Savitskiy

Parfenyuk

Ілащук

et al. 2004

Journal of Alloys and Compounds

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Section: Electric Propertiessupporting

confidence: 54%

Section: Electric Propertiesmentioning

confidence: 99%

Electrical and magnetic properties of Cd1−Zn Te crystals

Savitskiy

Parfenyuk

Ілащук

et al. 2004

Journal of Alloys and Compounds

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“…3 shows the 1.4 eV band for the four doped and for the pure materials, from which we can estimate the Huang-Rhys coupling parameter (S), the principal energy for the zero phonon line (E ), and the energy of the longitudinal optical phonon (E ) [11], [24]. It is well known that the Huang-Rhys coupling parameter is related to the chemical nature of the donor impurities in the material [17]. Characteristic values have been assigned to the most important impurities present in CdTe (e.g.…”

Section: Resultsmentioning

confidence: 99%

Heavy metal doping of CdTe crystals

Saucedo

Fornaro

Sochinskii³

et al. 2004

IEEE Trans. Nucl. Sci.

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CdTe crystals doped with several heavy metals (Hg, Tl, Pb, and Bi) in the concentration range of 10 17 -10 18 at/cm 3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals was verified by chemical determination of etch pits density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. Low-temperature photoluminescence (PL) measurements were performed on the crystals in the 1.2-1.6 eV energy range. The crystals electrical properties were studied by Hall and I-V measurements. (D-X) and (DAP) lines dominate the PL spectra for CdTe crystals, suggesting -type conductivity and the presence of a compensation mechanism due to the heavy metal dopant incorporation. Investigating the 1.4 eV band, we obtained the Huang-Rhys parameter, the principal energy of zero phonon line and the energy of longitudinal optical phonon for each dopant. A particular PL line at 1.473 eV, correlated to M Te (M=heavy metal) defect centers, was found. It was found that the heavy metal-doped CdTe crystals have resistivity values in the range 10 8 -10 10 cm, with maximum values for Bi-and Hg-doped materials. Also, these materials show a higher dark current stability than the ones doped with the other heavy metals. Only detectors made from Hg-doped crystals gave response to X and radiation.

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“…При температуре 295 K они владели электро-проводимостью σ = 1.7 · 10 [18]. При этом наблюдается увеличение сопротивления материала, что неудовлетворительно влияет на электрические ха-рактеристики приборов (увеличивается последователь-ное сопротивление).…”

Section: экспериментальная частьunclassified

Электрические свойства и энергетические параметры гетеропереходов n-FeS-=SUB=-2-=/SUB=-/p-Cd-=SUB=-1-x-=/SUB=-Zn-=SUB=-x-=/SUB=-Te

Orletskii¹,

Ілащук²,

Солован³

et al. 2018

Физика И Техника Полупроводников

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The conditions for fabricating n -FeS_2/ p -Cd_1 –_ x Zn_ x Te heterojunctions by the spray pyrolysis of thin pyrite films on p -Cd_1 –_ x Zn_ x Te crystalline substrates are investigated. A comprehensive analysis of the current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics makes it possible to establish the limitation of the reverse current by the space-charge region at small reverse biases and consider the mechanisms of current formation with the participation of energy levels near the heterojunction. A model of the energy profile of the n -FeS_2/ p -Cd_1 –_ x Zn_ x Te heterojunction is proposed, which turns out to be in good correspondence with the experimentally determined parameters and the dynamics of their change with a variation in temperature.

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Thermostability of physical properties of cadmium telluride crystals

Cited by 18 publications

References 10 publications

Electrical and magnetic properties of Cd1−Zn Te crystals

Electrical and magnetic properties of Cd1−Zn Te crystals

Heavy metal doping of CdTe crystals

Электрические свойства и энергетические параметры гетеропереходов n-FeS-=SUB=-2-=/SUB=-/p-Cd-=SUB=-1-x-=/SUB=-Zn-=SUB=-x-=/SUB=-Te

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