Thermomechanical Resist Removal-Cleaning System Using Cryogenic Micro-Slush Jet

Ishimoto, Jun; Tan, Daisuke; Ohtake, Hiroto; Samukawa, Seiji

doi:10.4028/www.scientific.net/ssp.187.145

Cited by 7 publications

(10 citation statements)

References 2 publications

(3 reference statements)

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“…In order to make effective use of the high performance of such cryogenic solid particles in the field of advanced nano technology, our laboratory has developed a new physical semiconductor cleaning method which employs cryogenic spray [2,3].…”

Section: Introductionmentioning

confidence: 99%

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

Ishimoto¹,

Oh²,

Zhao³

et al. 2014

AIP Conference Proceedings

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Abstract. The ultra-high heat flux cooling characteristics and impingement behavior of cryogenic micro-solid nitrogen (SN 2 ) particles in relation to a heated wafer substrate were investigated for application to next generation semiconductor wafer cleaning technology. The fundamental characteristics of cooling heat transfer and photoresist removal-cleaning performance using micro-solid nitrogen particulate spray impinging on a heated substrate were numerically investigated and experimentally measured by a new type of integrated computational-experimental technique. This study contributes not only advanced cryogenic cooling technology for high thermal emission devices, but also to the field of nano device engineering including the semiconductor wafer cleaning technology.

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Section: Introductionmentioning

confidence: 99%

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

Ishimoto¹,

Oh²,

Zhao³

et al. 2014

AIP Conference Proceedings

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show abstract

“…In order to make effective use of high-performance possessed by such cryogenic solid particle in application to advanced nano technology field, our laboratory have developed the new physical semiconductor cleaning method by using cryogenic spray (2,3).…”

Section: Introductionmentioning

confidence: 99%

Cryogenic Single-Component Micro-Nano Solid Nitrogen Particle Production Using Laval Nozzle for Physical Resist Removal-Cleaning Process

Ishimoto

Koike

et al. 2013

ECS Trans.

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The innovative characteristics of the cryogenic single-component micro-nano solid nitrogen (SN 2 ) particle production using super adiabatic Laval nozzle and its application to the physical resist removal-cleaning process are investigated by a new type of integrated measurement coupled computational technique. The originality to be noted in the present study is that the continuous production of micro-nano SN 2 particle is achieved by using single component gas-liquid two-phase flow of subcooled nitrogen through a Laval nozzle (converging-diverging nozzle). As a result of present computation, it is found that high-speed ultra-fine SN 2 particle is continuously generated due to the freezing of liquid nitrogen (LN 2 ) droplet induced by rapid adiabatic expansion of subsonic subcooled two-phase subcooled nitrogen flow passing through the Laval nozzle. Furthermore, the effect of SN 2 particle diameter, injection velocity, and attack angle to the wafer substrate on resist removal-cleaning performance is investigated in detail by integrated measurement coupled computational technique.

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“…Conventional RCA chemical cleaning can dissolve these new materials and damage the pattern. Physical techniques for semiconductor cleaning include a cryogenic high-speed spray of micro-solid nitrogen, [1][2][3][4] an Ar aerosol method, 5 a CO 2 gas cluster method, 6 and wet laser shockwave cleaning. 7 Megasonic cleaning is a physical cleaning technique where particles are removed by the collapse of cavitation bubbles, acoustic streaming, and the surrounding pressure gradient.…”

mentioning

confidence: 99%

Numerical Analysis of Single Bubble Behavior in a Megasonic Field by Non-Spherical Eulerian Simulation

Ochiai

Ishimoto

2014

ECS J. Solid State Sci. Technol.

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The mechanism of particle removal in megasonic cleaning needs to be clarified so that it can be controlled and used to clean nanodevices without causing pattern damage. Single bubble behavior in a standing megasonic wave was analyzed using a compressible locally homogeneous model of a gas-liquid two-phase medium. This simulation is the first step toward understanding the particle removal mechanism in megasonic cleaning. We confirmed that our numerical method simulated the characteristics of bubble translational motion in a standing wave, in which the direction of the movement due to the primary Bjerknes force changed at the resonant radius. When the initial position of the bubble was near a moving wall, even a bubble with a radius smaller than the resonant radius moved toward the pressure node. In the three-dimensional calculations, bubble collapse near a side wall induced a higher pressure on the side wall than the maximum pressure of the megasonic wave. The bubble dynamics calculation with gas diffusion indicated that the effect of the rectified diffusion was small because the effect of the dynamic bubble motion was dominant on a timescale of several milliseconds.Semiconductor cleaning is important because contaminant particles adhering to a wafer surface reduce the quality of the semiconductor device. As the size of semiconductor devices decreases, the size of contaminant particles that can cause fatal defects also decreases. Therefore, better cleaning techniques are required. Furthermore, unconventional materials are increasingly being used to reduce power consumption and improve the speed of semiconductor devices. Conventional RCA chemical cleaning can dissolve these new materials and damage the pattern. Physical techniques for semiconductor cleaning include a cryogenic high-speed spray of micro-solid nitrogen, 1-4 an Ar aerosol method, 5 a CO 2 gas cluster method, 6 and wet laser shockwave cleaning. 7 Megasonic cleaning is a physical cleaning technique where particles are removed by the collapse of cavitation bubbles, acoustic streaming, and the surrounding pressure gradient. 8,9 However, the physical forces resulting from the collapse of cavitation bubbles can cause pattern damage. Thus, control of cavitation bubbles in the megasonic field is essential for removing contaminant particles without pattern damage during the megasonic cleaning of nanodevices.There are many experimental studies of megasonic cleaning, such as analyses of particle removal and pattern damage in deionized water with several dissolved gases 10 and observation of bubble behavior. 11 However, it is difficult to determine the mechanism of particle removal experimentally because it occurs on very small temporal and spatial scales. Therefore, theoretical and numerical studies have also been performed. Deymier et al. calculated the acoustic pressure field around the pattern on a silicon wafer and the shear stress acting on the wafer. 12 Their results suggest that the calculated shear stress is far lower than the shear strength of the silic...

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Thermomechanical Resist Removal-Cleaning System Using Cryogenic Micro-Slush Jet

Cited by 7 publications

References 2 publications

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

Cryogenic Single-Component Micro-Nano Solid Nitrogen Particle Production Using Laval Nozzle for Physical Resist Removal-Cleaning Process

Numerical Analysis of Single Bubble Behavior in a Megasonic Field by Non-Spherical Eulerian Simulation

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