Thermoluminescence kinetics of oxygen-related centers in AlN single crystals

Weinstein, I. A.; Вохминцев, А. С.; Spiridonov, D. M.

doi:10.1016/j.diamond.2012.02.004

Cited by 46 publications

(25 citation statements)

References 21 publications

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“…The values of frequency factors s 00 ¼ 10 6 e10 9 s À1 obtained in the same paper also agree with the data of the present work. Note that the low values s 00 ¼ 10 4 e10 5 s À1 are also characteristic of TL processes for example in aluminum nitride with oxygen-vacancy centers (Weinstein et al, 2012).…”

Section: Resultsmentioning

confidence: 99%

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Weinstein¹,

Вохминцев²,

Minin³

et al. 2013

Radiation Measurements

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h i g h l i g h t s< UV-irradiated h-BN powder is characterized by three TL peaks in different spectral regions. < TL peaks at 380 and 600 K are caused by capture levels of one-boron and three-boron centers, respectively. < Visible range emissions of vacancy centers and oxygeneboron complexes dominate in thermoluminescence of h-BN. a r t i c l e i n f o b s t r a c tThermally stimulated luminescence (TL) from UV-irradiated h-BN powder synthesized using carbamide technique was studied. Three TL peaks at T max ¼ 380, 500 and 600 K during linear heating with 2 K/s rate in RT e 773 K temperature range were observed. It was found that the 2.90 and 3.25 eV emission bands, which were related with recombination centers on the basis of V N and BO À -complexes, dominate in TL spectra of h-BN. Experimental TL glow curves were analyzed in terms of general order kinetics and energy parameters of responsible capture levels were estimated. It was shown, considering the independent data on the luminescent properties of hexagonal boron nitride in different structural states, that TL peaks at 380 K and 600 K were due to traps based on the one-boron and the three-boron centers with thermal depth E A ¼ 0.7 and 1.0 eV, respectively. The possible origin of the trap with E A ¼ 1.6 eV, responsible for the TL peak at 500 K, is discussed.

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Section: Resultsmentioning

confidence: 99%

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Weinstein¹,

Вохминцев²,

Minin³

et al. 2013

Radiation Measurements

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“…Models of the luminescence mechanism were proposed before in [39,52]. In these models, the stimulated types of luminescence (TL and OSL) were explained using the delocalized recombination concept.…”

Section: Luminescence Mechanismmentioning

confidence: 99%

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

2014

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“…Possible applications of the AlN single crystals in solid state dosimetry of β-and UV-irradiation with methods of thermally and optically stimulated luminescence (TL and OSL) are shown in Ref. [12,13]. It is known that intrinsic and impurity defects of the anion sublattice (V N -and O N -centers) determine emission activity of AlN in the UV/Vis spectral range and help to detect and store dosimetric information [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…It is known that intrinsic and impurity defects of the anion sublattice (V N -and O N -centers) determine emission activity of AlN in the UV/Vis spectral range and help to detect and store dosimetric information [12][13][14][15]. Recently within the framework of formal kinetics analysis of the TL processes involving the above mentioned centers the values of the activation energy and effective frequency factor have been obtained [10,13]; and dose dependences of the TL and OSL response have been analyzed [16,17]. However, the basic parameters responsible for mechanisms of optically stimulated emission of oxygen-related complexes in bulk aluminum nitride have not been studied enough.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is known that the O N -centers in different charge states form shallow electron traps [22], which are activated below RT and serve donors in the bleaching under study. In turn, the anion V N -vacancies are deep donors with 0.5-0.9 eV estimates range of activation energy [10,13]. In this regard, it can be assumed that the observed decay components C1 and C2 characterize optically stimulated ionization of the donor O N -and V N -centers, respectively.…”

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Continuous wave OSL in bulk AlN single crystals

Вохминцев

Weinstein

Spiridonov

2012

Phys. Status Solidi C

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The kinetics of recombination luminescence of β‐irradiated AlN single crystals has been studied with continuous wave optically stimulated luminescence (CW‐OSL) method. It is shown that the OSL process is characterized by two exponential components with a decay time τ = 32 and 212 s. Photoionization cross‐sections σ = 4.8·10‐19 and 7.3·10‐20 cm2 have been evaluated, assuming each component is related to electron traps based on VN‐ and/or ON‐centers at various charged states. It is established that dose dependences of the OSL response of the bulk crystals under study are linear with taking into correct accounting for the radiation induced afterglow and hence can be used for quantitative estimates in solid state dosimetry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Thermoluminescence kinetics of oxygen-related centers in AlN single crystals

Cited by 46 publications

References 21 publications

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

Spectral and kinetic features of thermoluminescence in hexagonal boron nitride powder after UV-irradiation

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

Continuous wave OSL in bulk AlN single crystals

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