Continuous wave OSL in bulk AlN single crystals

Abstract

The kinetics of recombination luminescence of β‐irradiated AlN single crystals has been studied with continuous wave optically stimulated luminescence (CW‐OSL) method. It is shown that the OSL process is characterized by two exponential components with a decay time τ = 32 and 212 s. Photoionization cross‐sections σ = 4.8·10‐19 and 7.3·10‐20 cm2 have been evaluated, assuming each component is related to electron traps based on VN‐ and/or ON‐centers at various charged states. It is established that dose dependences of the OSL response of the bulk crystals under study are linear with taking into correct accounting for the radiation induced afterglow and hence can be used for quantitative estimates in solid state dosimetry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Observation of the Long Afterglow in AlN Helices

“…Owing to the slow decay component of τ 2 , the weak afterglow features can still be viewed for more than 10 min after the removal of the 254 nm UV irradiation source. To the best of our knowledge, such PL features in unintentionally doped AlN has not been reported previously. − To further probe the origin of the long afterglow feature, a 365 nm irradiation source was used to irradiate the as-prepared AlN helices for 2 min in dark room. However, only a weak purple color was observed (Figure j), and no fingerprint of afterglow feature was found after the removal of the 365 nm excitation source (Figure k), which excludes the possible contribution of 430 nm PL emission for the observed afterglow effect.…”

Особенности Спектрально-Разрешенной Термолюминесценции В Облученных Микрокристаллах Нитрида Алюминия

“…Немаловажное место среди подобных материалов занимает нитрид алюминия благодаря своей широкой запрещенной зоне около 6.2 eV, химической стойкости, высокой теплопроводности и т. д. [1][2][3][4][5][6][7]. Известны применения AlN для создания светодиодов и устройств поверхностных акустических волн, подложек для элементов электроники, детекторных сред для регистрации ионизирующего излучения различной природы [8][9][10][11][12][13][14].…”

Investigation of the applicability of post-irradiation annealing to reduce the degree of disorder in AlN ceramic to proton irradiation

“…However, it should be noted that thermal annealing allows annealing of defects in the entire volume of the sample, which for some cases is technically impossible or unacceptable. In this case, methods of laser destruction of defects are used, which makes it possible to anneal the defects locally [43][44][45].…”