Thermoluminescence and scintillation properties of rare earth oxyorthosilicate scintillators

Szuprvczvnski, P.; Melcher, Charles L.; Spurrier, M.A.; Maskarinec, M.P.; Carey, A.A.; Wojtowicz, A.J.; Drozdowski, Winicjusz; Wiśniewski, D.; Nutt, R.

doi:10.1109/tns.2004.829388

Cited by 37 publications

(27 citation statements)

References 7 publications

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“…Electron traps influence the scintillation emission of LSO since the trapped electron can participate in emission at definite temperature [15]. Traps effect on luminescence was also observed in PbWO 4 scintillator [16].…”

Section: Article In Pressmentioning

confidence: 87%

Luminescence and energy transfer processes in Lu2SiO5:Ce3+ scintillator

Liu

Shi

Yin

et al. 2006

Journal of Luminescence

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Section: Article In Pressmentioning

confidence: 87%

Luminescence and energy transfer processes in Lu2SiO5:Ce3+ scintillator

Liu

Shi

Yin

et al. 2006

Journal of Luminescence

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“…An important advantage of LSO:Ce is the lack of shallow electron traps with respect to aluminum garnets and perovskites indicated by very low TSL intensity below RT [122,134], see Fig. 15.…”

Section: Orthosilicate Single Crystalsmentioning

confidence: 99%

Complex oxide scintillators: Material defects and scintillation performance

Nikl¹,

Laguta

Vedda

2008

Physica Status Solidi (b)

195

106

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An overview of recognized structural defects, impurities and related trapping levels and their role in the scintillation mechanism is provided and discussed in single crystal materials belonging to tungstate, Ce‐ or Pr‐doped aluminum perovskite, garnet and finally to Ce‐doped silicate scintillators. New achievements and open problems in deeper understanding of electron and hole self‐trapping phenomena and of the nature of defects in the crystal structure and their ability to localize migrating charge carriers are indicated. Fast optical ceramics and nanocomposite materials are pointed out as possible future advanced scintillators. Such novel technologies can in principle explore materials which are not available in the bulk single crystal form, but their figure‐of‐merit is dramatically dependent on the surface‐interface defect states and related trapping and nonradiative recombination phenomena. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This confirms total elimination of light storage in the samples. It was proposed [33] that deep charge carrier traps corresponding to high-temperature TSL peaks can reduce scintillation light yield, and shallow traps manifested at peaks near $100 K are usually responsible for slow decay components. We observed very low TSL intensity for LGSO crystals with improved characteristics in comparison with data for LGSO in [33] and our data for LSO (see Fig.…”

Section: Afterglowmentioning

confidence: 99%