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The afterglow and thennoluminesccnk (n) properties of several Ce3+ doped LuzSiOs crystals are reported. Both properties are caused by the presence of charge traps in the crystals. At least six different glow peaks are observed in t h e n glow curve. Each is related to a specific charge trap. The parameters for these charge maps. such as the trap depth and the frequency factor, were obtained from first-order kinetics peak analysis of the n glow curve. A charge trap with a depth of 1.0 eV is responsible for the afterglow observed at rwm temperature. Ce'+ ions appear to be the luminescence c e n m in the recombination process of the trapped charge carriers It will be shown that optical excitation in the 5d levels of Ce3+ produces trap filling. The possible nature of the charge traps will be discussed.

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