Thermoelectric properties of quaternary Heusler alloys<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>Fe</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>VAl</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>

Lue, Chin‐Shan; Chen, C. F.; Lin, Jingjun; Yu, Ying; Kuo, Y. K.

doi:10.1103/physrevb.75.064204

Cited by 131 publications

(68 citation statements)

References 31 publications

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“…All samples indicated n-type behavior as we expected from the data reported for bulk samples of the same composition. Notably, maximum magnitude of Seebeck coef cient reached −120 μV K −1 at 340 K for the sample deposited at 1073 K. The temperature dependence and the magnitude of Seebeck coef cient were similar to the previously reported data of bulk sample obtained at Fe 2 VAl 0.95 Si 0.05 4,5) . In contrast, the thin-lms deposited at low temperatures below 973 K possessed smaller magnitude of Seebeck coef cient than bulk material.…”

Section: Resultssupporting

confidence: 76%

“…We selected Fe 2 VAl 0.95 Si 0.05 as the composition of target because a high power factor with n-type behavior was reported for the bulk samples at this composition [2][3][4][5] . Despite that the composition of lms form the Fe 2 VAl 0.95 Si 0.05 target had an excess of Fe due to the difference of sputtering probability, we controlled the composition by using an Al-V alloy chip placed at the center of target disk.…”

Section: Sample Preparationmentioning

confidence: 99%

“…L2 1 -type Heusler phase stabilizes at around Fe 2 VAl is widely considered as one of the potential thermoelectric materials working at low temperature below 500 K. Its power factor reaches 5.5 mW m −1 K −2 at the optimal carrier concentration [2][3][4][5] . Notably this value is larger than that of Bi 2 Te 3 -based thermoelectric materials 1) .…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Fe2VAl-Based Thin-Films Deposited at High Temperature

2016

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Fe 2 VAl-based thin-lms were prepared using radio frequency magnetron sputtering technique at various substrate temperatures up to 1073 K. At low substrate temperature below 773 K, we did not observe any evidences of L2 1 Heusler phase but the epitaxially grown B2-phase, which is considered as a chemically disordered structure of Heusler-phase. At high substrate temperatures above 773 K, L2 1 ordering became observable and its volume fraction was increased with increasing the substrate temperature. The sample deposited at 1073 K, that was considered as the highly ordered L2 1 -phase, possessed S ≈ −120 μV K −1 at around 340 K, and this value is almost the same with that previously reported for bulk samples. The power factor indicated large values exceeding 2.0 mWmat the room temperature. The thermal conductivity of Fe 2 VAl thin-lm was reduced to a half value of the bulk. As a result, the maximum gure of merit was almost doubled to 0.07 at 400 K from 0.04 of bulk samples.

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Section: Resultssupporting

confidence: 76%

Section: Sample Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Fe2VAl-Based Thin-Films Deposited at High Temperature

2016

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“…[1][2][3] Unfortunately, however, its large magnitude of lattice thermal conductivity lat prevents us from obtaining a large ZT-value. If the magnitude of lat were effectively reduced without greatly affecting the power factor, the Heusler-type Fe 2 VAl could be used as the environment-friendly, practical thermoelectric material.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Element Substitution on Electronic Structure, Electron Transport Properties, and Lattice Thermal Conductivity of Fe2VAl Thermoelectric Material

et al. 2010

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By using the first principles cluster calculation together with the band calculation, we identified that (a) Ru or Rh substitution for Fe and (b) Zr, Nb and Mo substitution for V are presumably useful for decreasing the lattice thermal conductivity without greatly affecting the electron transport properties. The Fe 2 V 1Àx Zr x Al 0:9Àx Si 0:1þx (x ¼ 0, 0.02, 0.04, 0.06, and 0.1) alloys indeed possessed the effective reduction in lattice thermal conductivity with increasing Zr concentration while the Seebeck coefficient showed very weak Zr concentration dependence. The Fe 2Ày Ir y V 0:9Ày Ti 0:1þy Al (y ¼ 0, 0.02, 0.04, 0.06, and 0.1) alloys, on the other hand, possessed drastic reduction of Seebeck coefficient most likely due to the newly introduced Ir 5d states. These experimental facts agree with the present theoretical-prediction, and it was clearly proved that the combinational use of cluster calculation and band calculation is very useful in developing new thermoelectric material.

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“…1) The pseudogap Fe 2 VAl system is a new candidate for thermoelectric material, because of the occurrence of a large Seebeck coefficient by fourth element doping or off-stoichiometry. [2][3][4][5][6][7][8][9][10] The Seebeck coefficient, S, at a temperature, T, in metallic materials is expressed by 11) SðTÞ ¼ À …”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of P-Type Heusler Compounds (Fe2−xCox)(V1−yTiy)Al

2008

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We report on the effect of Co and Ti co-doping on the thermoelectric behavior of Fe 2 VAl based alloys. The doped alloys, (Fe 2Àx Co x )(V 1Ày Ti y )Al, with compositions x ¼ 0:01{0:07 and y ¼ 0:04{0:20 exhibit a p-type thermoelectric property when the total valence electron number is below 24. The co-doping of cobalt and titanium is believed to cause a substantial shift of the Fermi level from the center of the pseuodgap to a lower energy position. In particular, the alloy with x ¼ 0:03 and y ¼ 0:10 exhibits a p-type thermoelectric behavior with a large Seebeck coefficient of S ¼ 85 mV/K as well as a low electrical resistivity of ¼ 2:3 m m at 400 K, so that the power factor, P ¼ S 2 =, reaches 3:2 Â 10 À3 W/m K 2 . The power factor is larger than that of the Ti doped Fe 2 VAl alloy so far reported. The high power factor caused by the co-doping of Co and Ti might be due to a modification in the band structure on the valence band side around the Fermi level. The co-doping of Co and Ti is also effective in reducing the thermal conductivity, mainly due to phonon scattering.

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Thermoelectric properties of quaternary Heusler alloysFe2VAl1−xSix

Cited by 131 publications

References 31 publications

Thermoelectric Properties of Fe<sub>2</sub>VAl-Based Thin-Films Deposited at High Temperature

Thermoelectric Properties of Fe<sub>2</sub>VAl-Based Thin-Films Deposited at High Temperature

The Effects of Element Substitution on Electronic Structure, Electron Transport Properties, and Lattice Thermal Conductivity of Fe<SUB>2</SUB>VAl Thermoelectric Material

Thermoelectric Properties of P-Type Heusler Compounds (Fe<SUB>2−<I>x</I></SUB>Co<I><SUB>x</SUB></I>)(V<SUB>1−<I>y</I></SUB>Ti<I><SUB>y</SUB></I>)Al

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Thermoelectric properties of quaternary Heusler alloysFe2VAl1−xSix

Cited by 131 publications

References 31 publications

Thermoelectric Properties of Fe<sub>2</sub>VAl-Based Thin-Films Deposited at High Temperature

Thermoelectric Properties of Fe<sub>2</sub>VAl-Based Thin-Films Deposited at High Temperature

The Effects of Element Substitution on Electronic Structure, Electron Transport Properties, and Lattice Thermal Conductivity of Fe<SUB>2</SUB>VAl Thermoelectric Material

Thermoelectric Properties of P-Type Heusler Compounds (Fe<SUB>2&minus;<I>x</I></SUB>Co<I><SUB>x</SUB></I>)(V<SUB>1&minus;<I>y</I></SUB>Ti<I><SUB>y</SUB></I>)Al

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Thermoelectric Properties of P-Type Heusler Compounds (Fe<SUB>2−<I>x</I></SUB>Co<I><SUB>x</SUB></I>)(V<SUB>1−<I>y</I></SUB>Ti<I><SUB>y</SUB></I>)Al