2020
DOI: 10.1016/j.spmi.2019.106367
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Thermoelectric properties of InN graphene-like nanosheet: A first principle study

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Cited by 28 publications
(10 citation statements)
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“…2 shows the maximum ZT achieved for bulk thermoelectric materials over the past six years as a function of temperature. 33–234…”
Section: Strategiesmentioning
confidence: 99%
“…2 shows the maximum ZT achieved for bulk thermoelectric materials over the past six years as a function of temperature. 33–234…”
Section: Strategiesmentioning
confidence: 99%
“…The 2D InN, another planar graphene-like structure, is a promising optoelectronic nanomaterial with narrow direct bandgap. The 2D InN exhibits good mechanical property and could be imposed with large tensile strains [293][294][295][296][297]. The fabrication of monolayer InN quantum wells was achieved by growth on GaN substrate, and the InN/GaN quantum wells can be applied to integrated LED [298][299][300][301][302][303][304][305][306][307][308][309][310].…”
Section: D Inn and Tlnmentioning
confidence: 99%
“…Besides, considering that 2D InN has high electron mobility, electrical conductivity, Seebeck coefficient, and low thermal conductivity, it's a promising candidate for non-toxic, stable thermoelectric applications ( Yeganeh et al., 2020 ).…”
Section: Properties Of Ultrathin Iii-v Semiconductorsmentioning
confidence: 99%