Thermoelectric properties of hydrothermally synthesized Bi2Te3−Sex nanocrystals

Mechanical properties of Bi2Te3 topological insulator investigated by density functional theory and nanoindentation

“…TIs have vast application capabilities in optoelectronics [4], plasmonics [5], spintronics [6], quantum computing [7], and for thermoelectric devices [2,8,9]. Among TIs, bismuth chalcogenides such as Bi 2 Te 3 and Bi 2 Se 3 are suitable for applications at room temperature, due to their large energy gap (~0.2-0.3 eV), and, therefore, they have been widely investigated [10,11].…”

Elastic constants determination of anisotropic materials by depth-sensing indentation

“…where By using Eqs. (21)(22)(23)(24) into Eqs. (16,17) (for additional computational details, we kindly invite the reader to refer to [14]), the indentation modulus M 1 in the direction perpendicular to the axis of symmetry, is calculated as follows:…”

“…Further details about the results discussed herein can be found in the work from Lamuta et al [15]. 3D topological insulators are considered a novel topological phase of matter, and are gaining growing interest from the worldwide scientific community [16][17][18], due to their promising applications in optoelectronics [19], plasmonics [20], spintronics [21], quantum computing [22], and thermoelectric devices [17,23,24]. Bi 2 Te 3 and Bi 2 Se 3 represent the most studied topological insulators, due to their large energy gap (~ 0.2-0.3 eV) that allows applications at room temperature [15,[25][26][27][28][29].…”

Scalable colloidal synthesis of Bi2Te2.7Se0.3 plate-like particles give access to a high-performing n-type thermoelectric material for low temperature application

“…5,6 They are widely used nowadays in commercialized Peltier devices operational in this temperature regime for practical cooling applications and appear promising to power ubiquitous sensors and wearable devices in the future. [7][8][9][10] As n-type narrow band semiconductor, Bi2Te3 crystallizes in tetradymite Bi2Te2Stype structure with rhombohedral symmetry, and exhibits very high ZT values in the lower temperature range of 300-500 K. 11,12 In bulk Bi2Te3, using isoelectronic dopants, Sb at Bisite as (Bi1-xSbx)2Te3 for p-type 13,14 and Se at Te-site as Bi2(Te1-xSex)3 for n-type [15][16][17][18][19][20][21][22] , the most effective substitution was found to be Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3, exhibiting desirable transport properties and the best ZT. 6 The advent of nanostructuring techniques and the broadly recognized effect of quantum confinement on TE transport properties 23 have stimulated extensive research on nanostructure formation, which has been explored for Bi2Te3 [24][25][26] and its optimal doped compositions [27][28][29][30][31][32] to decouple the inversely correlated electrical and thermal transport.…”

“…6 The advent of nanostructuring techniques and the broadly recognized effect of quantum confinement on TE transport properties 23 have stimulated extensive research on nanostructure formation, which has been explored for Bi2Te3 [24][25][26] and its optimal doped compositions [27][28][29][30][31][32] to decouple the inversely correlated electrical and thermal transport. Accordingly, Bi2Te3-based nanostructures attained by mechanical alloying, [20][21][22][28][29][30] melt spinning, 19,27,33,34 and wet chemical approaches [13][14][15][16][17][18][24][25][26] have been reported. Simultaneously, powder metallurgical techniques for bulk consolidation have been improved, to prevent grain growth during sintering, by higher heating rates realized using spark plasma sintering (SPS) as compared to conventional hot pressing.…”