Thermoelectric Properties of Cu2SnSe3-SnS Composite

Abstract

Heavily doped degenerate semiconductors such as Cu2SnSe3 (CTSe) attracted attention in thermoelectric (TE) and optoelectronic fields, due to their high electrical conductivity and small band gap. The small Seebeck coefficient of undoped CTSe, however, is the major issue in achieving high TE performance (figure of merit, ZT). Here, we report that the Seebeck coefficient of CTSe can be controlled by adding SnS within a CTSe matrix. CTSe-SnS composite has not only high Seebeck coefficient in the range of 300–500 µVolt/K but thermal conductivity which is lower than that of pristine CTSe due to the scattering at the interface between the matrix and the SnS particles. A reasonable ZT of 0.18 is achieved at 570 K by adding a small amount (3 wt.%) of SnS to the CTSe matrix.

Incorporation of Ni in Cu2SnSe3: An insight into the reduction in electrical resistivity

“…It is reflected in the Hall measurements where we have obtained a positive value of carrier concentration for all the synthesized samples as shown in table 4 [2]. At room temperature, the S value of 378 μV/K is obtained, in line with the earlier reports [36,37]. The addition of Ni has significantly reduced the Seebeck coefficient as shown in figure 8(b) attributed to the increase in charge carrier density ( ) n as described in Mott's law.…”

High thermoelectric performance of half-Heusler compound BiBaK with intrinsically low lattice thermal conductivity

“…However, a majority of HHs exhibit higher lattice thermal conductivity in the order of magnitude of 10 W m −1 K −1 , which seriously restricts the improvement of their ZT values [9][10][11][12]. During the past few years, more and more efforts have been focused on lowering the κ l to enhance the ZT values by nano-structuring, doping, and alloying [9,[12][13][14][15][16][17][18]. For example, it was found that a maximum ZT of ∼1.5 can been obtained at 1200 K for the p-type FeNb 1−x Hf x Sb with κ l less than 5 W m −1 K −1 [15].…”

The power of pores: review on porous thermoelectric materials

“…1,2 Thermoelectric materials have received considerable attention owing to their intrinsic ability to transform heat into electricity or vice versa through solid-state devices. [3][4][5] The thermoelectric effect is based on the principle that a temperature gradient across a material can generate a potential difference across the two ends of the material. 6,7 This is because heat ow causes electrons to be piled up at one side of the junction, resulting in the ow of electric current through an outer connected circuit to generate electricity.…”