Thermoelectric properties and crystal structure of ternary compounds in the Ge(Sn,Pb)Te–Bi 2 Te 3 systems

Кузнецова, Л. А.; Кузнецов, В. Л.; Rowe, D.M.

doi:10.1016/s0022-3697(99)00423-0

Cited by 108 publications

(74 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In extrinsic temperature regime of a semiconductor (T < T * ), the number of thermally excited charge carriers is very small and the resistivity is primarily determined by the extrinsic carriers. As the temperature increases, the thermally excited intrinsic carriers across the energy gap of the semiconductor can not be ignored and thus begin to contribute to the resistivity, so the resistivity will decrease when the temperature is higher than T * [25].…”

Section: Methodsmentioning

confidence: 99%

Effect of sintering temperature on thermoelectric properties of CdO ceramics

Zhang

Wang

2015

J Adv Ceram

View full text Add to dashboard Cite

The effect of sintering temperature on thermoelectric properties of CdO ceramics was investigated by solid-state reaction method within the temperature range of 700-1000 ℃. With the increase of sintering temperature, both the grain size and the carrier concentration of these samples increased, while the Seebeck coefficient decreased. The highest dimensionless figure of merit ZT, 0.34, was obtained at 1023 K for the sample sintered at 800 ℃, suggesting the potential application of CdO ceramics in thermoelectric (TE) devices.

show abstract

Section: Methodsmentioning

confidence: 99%

Effect of sintering temperature on thermoelectric properties of CdO ceramics

Zhang

Wang

2015

J Adv Ceram

View full text Add to dashboard Cite

show abstract

“…Bismuth telluride, Bi 2 Te 3 , and its alloys are known to be the excellent thermoelectric materials around room temperature. [1][2][3] They can be used in several applications, such as energy conversion, thermal sensors, thermoelectric coolers for laser diodes, etc. [4][5][6] The performance of thermoelectric devices is determined by a figure of merit (ZT), given by ZT ¼ (S 2 r/j) T, where S is the Seebeck coefficient, r is the electrical conductivity, and j is the thermal conductivity, which contains contribution from electrons and phonons.…”

mentioning

confidence: 99%

Electrical and thermoelectric properties of single-wall carbon nanotube doped Bi2Te3

Zhang

Wang

Yeoh

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

The effects of single-wall carbon nanotube (SWCNT) doping in n-type Bi2Te3 bulk samples on the electrical and thermal transport properties have been studied. Bi2Te3 samples doped with 0–5 wt. % SWCNTs were fabricated using solid state reaction and investigated using x-ray diffraction, transmission electron microscopy, and magneto transport measurements. Results show that the 0.5% doping results in the significant enhancement of the Seebeck coefficience to as high as −231.8 μV/K, giant magneto resistance of up to 110%, reduction of thermal conductivity, and change of sign of the Seebeck coefficient from n to p type depending on the doping level and temperature. The figure of merit, ZT, of the optimum SWCNT doped Bi2Te3 was increased by 25%–40% over a wide temperature range compared to the undoped sample.

show abstract

“…The power factor depends strongly on the electronic band structure and carrier scattering mechanism [17]. For a large power Table 3 Carrier concentration and Hall mobility of the Bi 0.5 Sb 1.5 Te 3 sintered at 450 or 500 C.…”

Section: Resultsmentioning

confidence: 99%