Thermoelectric power of bulk black-phosphorus

Flores, Eduardo; Ares, J.R.; Castellanos-Gómez, Andrés; Barawi, Mariam; Ferrer, Isabel J.; Sánchez, Carlos

doi:10.1063/1.4905636

Cited by 143 publications

(120 citation statements)

References 34 publications

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“…For direct allowed transition n = 1/2, direct forbidden transition n = 3/2, indirect allowed transition n = 2 and indirect forbidden transition n = 3. As o-BP single crystal is a direct band gap elemental semiconductor, n value is 1/2 [5,59]. It is determined that the o-BP single crystal has a band gap of 0.284 eV, which is generally consistent with prior measurements [5,59].…”

Section: Raman Spe Ctroscopy and Ir Spe Ctroscopy Of The O-b P Singlesupporting

confidence: 74%

Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method

et al. 2016

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(Ren TL)) spotlight due to its excellent room-temperature carrier mobility and layer-dependent direct band gap, which can be tuned from 0.3 to 2 eV as its thickness decreases from bulk to monolayer [5−8]. Therefore, o-BP is prized in bridging the gap between graphene and TMDCs. Accordingly, phosphorene, which is designated as a monolayer or a few layers of o-BP, has recently emerged as a new promising member of the 2D material family. Based on its intriguing properties, a plethora of exciting potential applications of monolayer or multilayer phosphorene have been reported, such as field-effect transistors (FETs) [5,9−13] [27,28]. Specifically, much interest has been focused on FETs based on multilayer phosphorene, stemming from its fascinating electrical properties. These FETs devices show the appreciable hole mobility (μ p ) in the order of 10 to 10 3 cm 2 V −1 s −1 and the on/off current switching ratio (I on /I off ) of 10 2 to 10 4 [5,9−13]. The theoretically predicted μ p for the monolayer or multilayer phosphorene at room temperature is infrequently high (10,000−26,000 cm 2 V −1 s −1 ) [9,11], and the I on /I off is remarkable large (exceeding 10 5 ) [5,9]. The implementation of monolayer or multilayer phosphorene can be attained by several classical methods including bottom-up processes, solution-based approaches [26,29−32], top-down methods [5,9−13]. Among these, although the bottom-up direct synthesis of large-area monolayer or multilayer phosphorene is the most promising way, by its reality, it has not yet been realized. The solution-based approaches have serious negative influences on both quality and purity of monolayer or multilayer phosphorene. The top-down methods are explored to achieve monolayer or multilayer phosphorene

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Section: Raman Spe Ctroscopy and Ir Spe Ctroscopy Of The O-b P Singlesupporting

confidence: 74%

Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method

et al. 2016

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“…Flores et al experimentally measured the thermoelectric properties of BP and found that it is a p-type semiconductor with a Seebeck coefficient of 335 µV/K at room temperature. Besides, the power factor of BP at 385 K is 2.7 times higher than that at room temperature, which is caused by the reduced electrical resistance with increasing temperature [10]. Although these works…”

Section: Introductionmentioning

confidence: 79%

High thermoelectric performance can be achieved in black phosphorus

et al. 2016

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Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P 0.75 Sb 0.25 . Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems.

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“…At room temperature, S B values as large as 335 µV/K have been found in few-layer BP flakes. 31 Therefore, if THz radiation impinges on an asymmetric antenna structure, both the thermoelectric and plasma wave effects can take place. However, it is still possible to select the active mechanism by exploiting the relative orientation of the antenna and the crystal directions.…”

Section: -3mentioning

confidence: 99%

Black phosphorus nanodevices at terahertz frequencies: Photodetectors and future challenges

2017

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The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its transport via electrical gating and direct band-gap, that can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor (FET), a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.

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Thermoelectric power of bulk black-phosphorus

Cited by 143 publications

References 34 publications

Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method

Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method

High thermoelectric performance can be achieved in black phosphorus

Black phosphorus nanodevices at terahertz frequencies: Photodetectors and future challenges

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