Thermoelectric Performance of Yb-Doped Ba8Ni0.1Zn0.54Ga13.8Ge31.56 Type-I Clathrate Synthesized by High-Pressure Technique

Chen, Chen; Zhang, Long; Dong, Jianying; Xu, Bin

doi:10.1007/s11664-016-5013-4

Cited by 11 publications

(6 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A zT value of up to 1.35 has been reported in Ba 8 Ga 16 Ge 30 , but it is a single-crystal sample. In addition, Tang et al synthesized Yb x Ba 8‑x Ga 16 Ge 30 compounds by a spark plasma sintering (SPS) method, and the maximum zT value reached was 1.1 at 950 K. Zhang et al prepared Ba 7.7 Yb 0.3 Ni 0.1 Zn 0.54 Ga 13.8 Ge 31.56 compounds by a high-pressure technique, and the maximum zT value reached 0.91 at 900 K. As we know, pressure can enhance the mechanical stability of the samples . As expected, the zT value of n-type polycrystalline clathrates Ba 8 Ga 16 Ge 30 reached 1.14 at 773 K by the HPHT method .…”

Section: Introductionmentioning

confidence: 79%

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

et al. 2018

View full text Add to dashboard Cite

The thermoelectric (TE) properties of n-type polycrystalline YbBaGaGe bulks can be optimized by high-pressure and high-temperature (HPHT) sintering. After HPHT sintering, abundant nanograins are randomly distributed in the sample. Grains are refined by HPHT, with the grains being smaller with higher pressure. In comparison with the arc-melted sample, the samples obtained by quenching under high pressure possess a great number of nanograins and lattice structural disorders. Lower thermal conductivity is benefited by our deliberately engineered microstructures via HPHT, and the minimum thermal conductivity is 0.86 W m K at 773 K. The thermal conductivity and electrical properties are optimized simultaneously by raising the reactive sintering pressure. In comparison with the arc-melted sample (0.56), a maximum zT value of 1.13 at 773 K is obtained for the YbBaGaGe sample fabricated at 5 GPa. This demonstrates that HPHT provides an effective strategy to improve TE performance through simultaneously enhancing electrical and thermal transport properties and should be applicable to other thermoelectric materials.

show abstract

Section: Introductionmentioning

confidence: 79%

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

et al. 2018

View full text Add to dashboard Cite

show abstract

“…This is an increase of 90% c o m p a r e d t o t h e Y b -f r e e s a m p l e . 4 2 8 A l s o i n Ba 8−x Yb x Ni 0.1 Zn 0.54 Ga 13.8 Ge 31.56 , 429 a slightly increased zT (15%, zT = 0.91 at 900 K) was reported for x = 0.3. In this case, the electrical resistivity and lattice thermal conductivity decrease with increasing x, the Seebeck coefficient, however, stays constant.…”

Section: Zintl Phasesmentioning

confidence: 94%

On the Ytterbium Valence and the Physical Properties in Selected Intermetallic Phases

Engel,

Gießelmann,

Reimann

et al. 2024

ACS Org. Inorg. Au

View full text Add to dashboard Cite

The present review summarizes important aspects of the crystal chemistry of ytterbium-based intermetallic compounds along with a selection of their outstanding physical properties. These originate in many cases from the ytterbium valence. Different valence states are possible here, divalent (4f 14 ), intermediate-valent, or trivalent (4f 13 ) ytterbium, resulting in simple diamagnetic, Pauli or Curie−Weiss paramagnetic, or valence fluctuating behavior. Especially, some of the Yb 3+ intermetallics have gained deep interest due to their Kondo or heavy Fermion ground states. We have summarized their property investigations using magnetic and transport measurements, specific heat data, NMR, ESR, and Mossbauer spectroscopy, elastic and inelastic neutron scattering, and XAS data as well as detailed thermoelectric measurements.

show abstract

“…So, we attempt to investigate the synthesis, microstructures, and TE properties of low-cost clathrate Ba 8 Cu 6 Si 40 by HPHT method. In addition, previous works − indicate that HPHT method provides us a new avenue to improve the TE properties. Compared with other approaches, the HPHT method, which offers a new degree of freedom in addition to the temperature and chemical constituents, has some unique superiorities including tuning rapidly, shortening the synthesis time, simplifying procedures, large-scale production, one-step, and intercepting high pressure properties to ordinary pressure, etc. − …”

Section: Introductionmentioning

confidence: 99%

Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type-I Clathrate Ba₈Cu₆Si₄₀

Sun

Zhao

et al. 2020

J. Phys. Chem. C

View full text Add to dashboard Cite

Si-based clathrate thermoelectric (TE) materials composed of low-cost, nontoxic, lightweight, and earth-abundant elements are typical representatives of cheaper thermoelectric materials. However, synthesis is difficult, and the relatively low ZT values are the barriers hindering the further development of the silicon clathrates. So, it is necessary to explore an alternative synthetic method and improve the ZT values simultaneously. In this work, Si-based clathrate Ba8Cu6Si40 samples have been synthesized by a simple, rapid, and feasible HPHT method with 25 min. We have investigated the changes of the TE properties and microstructures depending on the pressure in detail. The power factor has been increased due to the decreased carrier concentration, meanwhile, the thermal conductivity has been cut down on account of the strengthened full-spectrum-phonons scattering resulting from the multiple and multiscale microstructures by high-pressure processing. Ultimately, a relatively good ZT value 0.31 is achieved at 773 K for the sample synthesized at 4 GPa. To the best of our knowledge, it is higher than all of the results of pure Si-based Ba8Cu6Si40 compounds formed by other methods.

show abstract

Thermoelectric Performance of Yb-Doped Ba8Ni0.1Zn0.54Ga13.8Ge31.56 Type-I Clathrate Synthesized by High-Pressure Technique

Cited by 11 publications

References 27 publications

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

On the Ytterbium Valence and the Physical Properties in Selected Intermetallic Phases

Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type-I Clathrate Ba₈Cu₆Si₄₀

Contact Info

Product

Resources

About

Thermoelectric Performance of Yb-Doped Ba8Ni0.1Zn0.54Ga13.8Ge31.56 Type-I Clathrate Synthesized by High-Pressure Technique

Cited by 11 publications

References 27 publications

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb0.5Ba7.5Ga16Ge30

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb0.5Ba7.5Ga16Ge30

On the Ytterbium Valence and the Physical Properties in Selected Intermetallic Phases

Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type-I Clathrate Ba8Cu6Si40

Contact Info

Product

Resources

About

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb_0.5Ba_7.5Ga₁₆Ge₃₀

Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type-I Clathrate Ba₈Cu₆Si₄₀