Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides

Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine

“…3 shows theoretical curves showing the solid composition of InGaN deposited from the vapor phase as a function of the hydrogen mole fraction in carrier gas, where the input ratio, P 0 In aP 0 In P 0 Ga , is kept constant at 0.5. In the NH 3 system, the solid composition decreases significantly with increase of the hydrogen mole fraction in the carrier gas [10]. On the contrary, the solid composition of InGaN is independent of the growth temperature and is not affected by the hydrogen mole fraction in the N 2 H 4 system.…”

Development of InN metalorganic vapor phase epitaxy using in‐situ spectroscopic ellipsometry

“…Ammonia is generally used as nitrogen source in InN MOVPE. The high temperature, however, required for nitrogen activation and the presence of hydrogen as a bypass reaction product [5], combined with a low InN decomposition temperature demand for a sophisticated growth procedure. Due to a not fully optimised nitridation of the sapphire substrate some small parts of the epitaxial layer previously peeled off from the substrate, resulting in damages on the micrometer scale [6,7].…”

Growth of GaN Layers on Sapphire by Low‐Temperature‐Deposited Buffer Layers and Realization of p‐type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

“…At room temperature,d eep-level-related yellow emission could be observed. Them echanism of In incorporation in InGaN has been clarified by thermodynamic analysis by Professor Koukitu et al [52,53] Finally,b yc ombining high-quality-crystal growth technology using al ow-temperature-deposited buffer layer with p-type growth technology and InGaN growth technology, Nichia Corporation succeeded in commercializing doubleheterostructure-type InGaN blue LEDs for the first time in the world in 1993. [54] They also fabricated single-quantumwell LEDs in 1995, [55] which are also av ery important technology for enhancing the efficiency of nitride LEDs because avery narrow quantum well suppresses the quantumconfined Stark effect, [56] thus increasing the transition probability.…”