Thermodynamic Properties of Liquid Silver-Thallium Alloys

Kameda, Kazuo; Yoshida, Yoshio; Sakairi, Senzi

doi:10.2320/jinstmet1952.47.5_406

Cited by 8 publications

(2 citation statements)

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“…[5,6] In addition, it is expected that TlZnSnO would have a better field-effect mobility than InZnSnO which is known to provide high field-effect mobility in AOS material because s-orbital of Tl is larger than that of In. [7] Tl-related materials have been mined from Cu production process, but has not been much produced on account of their toxic characteristics and high reactivity [8]. On the other hand, Tl oxides, which are rather stable materials, are utilized in semiconductor research and production [9,10].…”

Section: Introductionmentioning

confidence: 99%

Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

Kishimoto

Ishikawa

Fujii

et al. 2018

J. Phys. D: Appl. Phys.

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TlZnSnO films, fabricated by sputtering with TlZnSnO targets composed of TlZnSnO powder, which was prepared via two-stage calcination, were analyzed. This study reports the first trial of TlZnSnO film preparation, and its optical and electrical properties. Tl atom concentrations of 0.9-1.36 at.% in the TlZnSnO films changed the bandgap between 2.83 and 3.07 eV. The obtained TlZnSnO ionization potential of 5.57-5.9 eV was slightly smaller than that of amorphous InGaZnO (a-IGZO). We also found that the conduction band was located approximately around 3 eV or lower beneath the vacuum level for each examined film; and that a deep density of state (DOS) exists near the valence band. A similar subgap DOS to that of a-IGZO existed even in TlZnSnO. However, the bandgap (2.83-3.07 eV) and donor level (31 meV) of TlZnSnO are smaller than those of a-IGZO.

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Section: Introductionmentioning

confidence: 99%

Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

Kishimoto

Ishikawa

Fujii

et al. 2018

J. Phys. D: Appl. Phys.

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“…Little Tl-related material has been produced owing to the low production demands on account of the toxic characteristics. 13) On the other hand, Tl oxide is sufficiently stable to be utilized in semiconductor research and production. 14,15) We firstly confirm the trend of TFT characteristics compared with those of the same 3B materials of Al, Ga, and In in ZnSnO to predict the TlZnSnO TFT performance.…”

Section: Introductionmentioning

confidence: 99%

High-mobility material research for thin-film transistor with amorphous thallium–zinc–tin oxide semiconductor

Kishimoto¹,

Lee²,

Kang³

et al. 2015

Jpn. J. Appl. Phys.

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The applicability of thallium-zinc-tin oxide (TlZnSnO) as a channel material for a thin-film transistor (TFT) was investigated by first-principles simulation and cosputtering experiment with XZnSnO (X = Al, Ga or In). The electron effective mass (m*) of Tl 0.4 ZnSnO was simulated to be >0.153, which is much smaller than that of In 0.4 ZnSnO (0.246). An In 0.4 ZnSnO TFT exhibited a mobility (μ) of 32.0 cm 2 V %1 s %1 in the experiment; therefore, the Tl 0.4 ZnSnO TFT was expected to have a higher mobility of approximately 50 cm 2 V %1 s %1 following the relation (μ / 1/m*). Moreover, the Tl-related oxide semiconductor would provide better TFT stability because its oxide vacancy is more stable than that of an In-related oxide semiconductor.

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Ag-Tl (Silver-Thallium)

Predel¹

Ac-Au – Au-Zr

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Thermodynamic Properties of Liquid Silver-Thallium Alloys

Cited by 8 publications

References 0 publications

Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target

High-mobility material research for thin-film transistor with amorphous thallium–zinc–tin oxide semiconductor

Ag-Tl (Silver-Thallium)

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