Thermodynamic, mechanical and thermal properties of NiW alloys from Harris functional LMTO-CPA calculations

Simak, Sergei I.; Ruban, Andrei V.; Vekilov, Yu.H.

doi:10.1016/0038-1098(93)90783-j

Cited by 18 publications

(8 citation statements)

References 13 publications

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“…2 to their results. Our measurements systematically differ from those of [9] giving somewhat lower values of the TEC. The reason for this difference is unclear.…”

Section: Resultscontrasting

confidence: 94%

“…It can be seen that substitution of nickel by tungsten leads to a noticeable decrease of the thermal expansion. To the best of our knowledge, there is only one report on the TEC of Ni-W alloys, and it gives values for room temperature [9]. The authors have calculated lattice parameters, bulk moduli, the TEC, and the mixing energy of Ni-W alloys using Harris functional LMTO-CPA calculations.…”

Section: Resultsmentioning

confidence: 99%

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Thermal Expansion of Ni–W, Ni–Cr, and Ni–Cr–W Alloys Between Room Temperature and 800 °C

et al. 2009

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“…2 to their results. Our measurements systematically differ from those of [9] giving somewhat lower values of the TEC. The reason for this difference is unclear.…”

Section: Resultscontrasting

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Thermal Expansion of Ni–W, Ni–Cr, and Ni–Cr–W Alloys Between Room Temperature and 800 °C

et al. 2009

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“…4e. These average CTE values are very close to the theoretical and calculative results, 36,37 and is lower than the CTE of 17 × 10 −6 · • C −1 of a pure copper at 25…”

Section: Resultssupporting

confidence: 86%

“…The filled Ni-W alloy exhibits excellent thermal stability because the incorporated tungsten decreases the average CTE of the filled Ni-W alloy. 36,37 Therefore, metallic cracks, voids and protrusions were not observed after the thermal annealing test at 500…”

Section: Resultsmentioning

confidence: 99%

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Microvia Filling with Nickel-Tungsten Alloy to Decrease the Coefficient of Thermal Expansion of Electronic Circuit Interconnections

Lin

Huang

Wang

et al. 2015

ECS Electrochemistry Letters

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A nickel-tungsten alloy plating formula was developed to electrochemically fill the microvias of printed circuit boards and the through-silicon vias (TSVs) of wafers. The plating solution was composed of Ni(SO 3 NH 2 ) 2 , citric acid, sodium citrate, Na 2 WO 4 , chloride ions, and 2-mercapto-5-benzimidazolesulfonic acid. A void-free Ni-W superfilling of a microvia and a TSV were achieved. The tungsten content in the filled alloy varied from 1.5 atom% to 5.5 atom%, depending on the plating temperature. The coefficient of thermal expansion of the filled Ni-W was theoretically calculated according the tungsten content, which was lower than that of copper. Microvia filling by copper electroplating has been widely employed to fabricate state-of-the-art printed circuit boards (PCBs) for interconnection, especially for integrated circuit (IC) packaging substrates.1-5 Recently, through-silicon vias (TSVs) have also been metallized by copper electroplating for the interconnection of threedimensional (3D) IC chip stacking packaging. [6][7][8][9][10][11][12][13] Copper is a good conductor but its coefficient of thermal expansion (CTE) is high. Therefore, issues related to CTE mismatch between the conducting materials and the dielectric materials arise in PCB and 3D packaging with high-density interconnections.Numerous authors have reported that the high CTE of the copper filled in the TSVs results in stress impacts on silicon substrates. [14][15][16][17] Copper atoms diffuse from the TSV due to thermal cycling, leading to void formation in the TSV. 18,19 The copper protrusion on the TSV caused respectively by thermal expansion and diffusion of copper lattices and atoms may destroy stacked IC chips. [20][21][22] Copper must be replaced by tungsten 23 or nickel 24,25 to overcome the issue of CTE mismatch.Although the CTE of tungsten is very low, 14,26 it cannot be electrochemically plated in an aqueous electrolyte. Fortunately, tungsten can be induced to co-deposit with nickel. [27][28][29][30][31][32] In this work, a Ni-W alloy plating formula that can achieve Ni-W bottom-up filling of microvia was developed. This plating formula can fill the microvia of PCBs and can also fill TSVs. The Ni-W filled TSVs exhibit good thermal stability after being annealed at 500• C for 4 h. ExperimentalThe dimensions of the PCB fragments cut for the Ni-W filling plating were 4.2 × 6.0 cm 2 . The microvias were formed by CO 2 laser ablation. The diameter and depth of the microvias were 80 μm and 40 μm, respectively. The sidewalls of the microvias were metallized by electroless copper plating in advance to deposit a 2-3 μm thick layer of copper before the filling plating.TSVs were formed by a deep reactive ion etching (DRIE) process (i.e., the Bosch process). The thickness of the isolation layer (i.e., SiO 2 ) in the TSVs formed by thermal oxidation was approximately 1-3 × 10 3 Å. The barrier layer was a TiN film with a thickness of 500 Å, which was conformably deposited by atomic layer deposition (ALD) for 600 cycles. The seed layer was depo...

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Fermi surfaces and electronic topological transitions in metallic solid solutions

et al. 1994

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Thermodynamic, mechanical and thermal properties of NiW alloys from Harris functional LMTO-CPA calculations

Cited by 18 publications

References 13 publications

Thermal Expansion of Ni–W, Ni–Cr, and Ni–Cr–W Alloys Between Room Temperature and 800 °C

Thermal Expansion of Ni–W, Ni–Cr, and Ni–Cr–W Alloys Between Room Temperature and 800 °C

Microvia Filling with Nickel-Tungsten Alloy to Decrease the Coefficient of Thermal Expansion of Electronic Circuit Interconnections

Fermi surfaces and electronic topological transitions in metallic solid solutions

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