Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

Abstract

The deposition of single SiC crystals has been processed inside a sealed enclosure at temperatures above 2300 K and pressures lower than 5 . i0 Pa by the modified Lely method. The purpose of this work is to examine the potentialities of different macroscopic models, thermodynamics, heat, and mass transfers on the simulation of the growth of such crystals with a special emphasis on their coupling mechanism. Thermodynamic modeling has been used to determine the most important reactive species involved in equilibrium conditions. Induction heating modeling has allowed the calculation of the actual temperatures inside the reactor which are not well known because of the difficulty associated with their measurements. Finally, mass transport modeling provided the calculated deposition rate. It was found that the calculated growth rates were close to the experimental ones which may indicate a good representation of the actual phenomena involved in the crucible. As a matter of fact each of the proposed models has contributed to a better knowledge of the process.

Thermodynamics Simulations Applied to Gas-Solid Materials Fabrication Processes

“…On both processes [32][33][34][35], some modeling trends were largely reported combined with experimental results obtained in our research's groups.…”

Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

“…For 4H/6H SiC with hexagonal structure, gliding can occur in the basal (0 0 0 1) plane [14,15], and the shear stress component, τ rz , and the von Mises stress are usually used as the resolved shear stress [2][3][4][5][6][7][8]. Here the von Mises stress is defined by…”

“…The process modeling of PVT growth is a powerful tool for the optimization of growth process and has attracted great research interests in recent years. Hofmann et al [2] modeled the temperature distribution in a SiC growth system in which the growth temperature is 2573 K and the system pressure is up to 3500 Pa. Pons et al [3] proposed a numerical scheme for the calculation of electromagnetic field originated by the induction heating. Chen et al [4] for the first time proposed a growth kinetics model which assumes that the growth rate is proportional to the supersaturation of the SiC vapor species at the growth interface and the growth rates in a 75 mm growth system were predicted.…”

Application of flow-kinetics model to the PVT growth of SiC crystals

“…Seeded sublimation growth technique (modified Lely method) has been widely used to produce SiC and AlN crystals since 1970s [1,2]. Many investigators studied the growth process of SiC crystals by numerical simulation method [3][4][5][6][7][8][9][10][11][12]. Hofmann et al [3,4] developed a numerical process model based on a finite volume scheme FASTEST to simulate the heat transfer in a 2 in SiC growth set-up, and demonstrated the flow field in the growth chamber caused by the buoyancy effect.…”

“…Hofmann et al [3,4] developed a numerical process model based on a finite volume scheme FASTEST to simulate the heat transfer in a 2 in SiC growth set-up, and demonstrated the flow field in the growth chamber caused by the buoyancy effect. Pons et al [5,6] used a finite element code Flux-Expert to calculate the electromagnetic field and temperature distribution. Selder et al [7] simulated the heat and mass transfer and compared the calculated growth rates with the experimental data.…”