Thermodynamic considerations of the epitaxial growth of SiC polytypes

Fissel, A.

doi:10.1016/s0022-0248(00)00330-4

Cited by 84 publications

(43 citation statements)

References 48 publications

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“…The ab initio calculations of the polytype energies indicate that the bulk energy differences are small, well less than 1 meV/atom [4,5]. This statement is in agreement with numerous experimental observations [7][8][9][10][11][12]. This statement is in agreement with numerous experimental observations [7][8][9][10][11][12].…”

Section: Crystal Structures Of Sicsupporting

confidence: 89%

Silicon Carbide Epitaxy

Skowroński

Kimoto

2015

Handbook of Crystal Growth

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Section: Crystal Structures Of Sicsupporting

confidence: 89%

Silicon Carbide Epitaxy

Skowroński

Kimoto

2015

Handbook of Crystal Growth

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“…The 3C-polytype is more stable at higher carbon partial pressure [97] and thus the formation of 3C of the growing epitaxial layers can be prevented at low C/Si ratio. The triangular defects density decreases with decreasing C/Si ratio [79,88].…”

Section: C/si Ratiomentioning

confidence: 99%

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Yazdanfar¹

2014

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“…[56]. The species are adsorbed on the SiC seed crystal surface, which is kept at a lower temperature with respect to the powder.…”

Section: Surface Kinetics Model For Dislocation Evolutionmentioning

confidence: 99%

Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Sakwe

Stockmeier

Hens

et al. 2008

Physica Status Solidi (b)

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This paper reviews research on advanced bulk crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p‐type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n‐type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 °C and higher) is beneficial for low dislocation densities. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Thermodynamic considerations of the epitaxial growth of SiC polytypes

Cited by 84 publications

References 48 publications

Silicon Carbide Epitaxy

Silicon Carbide Epitaxy

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

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