Thermodynamic analysis of the chemical vapor deposition of diamond in the C-H, C-O and C-H-O systems

Hwang, Nong M.

doi:10.1016/0022-0248(94)90738-2

Cited by 20 publications

(12 citation statements)

References 14 publications

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“…Note that, while the linear equation of Ref. [20] is valid for these second order variables at small scales, the relativistic corrections obtained here become increasingly important as the perturbation modes approach the horizon scale.…”

Section: Non-gaussian Initial Conditions For Numerical Simulationsmentioning

confidence: 63%

“…Additionally, Ref. [20] extends this correspondences to second-order perturbations. In this way, the equivalence of the dynamical equations is established for the restricted case of pressureless matter and neglecting the decaying mode of perturbations.…”

Section: Introductionmentioning

confidence: 67%

“…In this paper we present the Poisson equation at second order in the framework of relativistic cosmological perturbation theory [23][24][25][26][27]. Previous studies have explored this constraint for the limit of a dust universe at small scales [20] (in this case the linear equation (1.1) is recovered), and for a ΛCDM universe at large scales [28]. Instead, our analysis yields the Poisson constraint equation in terms of relativistic perturbations that find a direct correspondence with Newtonian inhomogeneities, and without approximations.…”

Section: Introductionmentioning

confidence: 99%

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The Poisson equation at second order in relativistic cosmology

Hidalgo

Christopherson

Malik

2013

J. Cosmol. Astropart. Phys.

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We calculate the relativistic constraint equation which relates the curvature perturbation to the matter density contrast at second order in cosmological perturbation theory. This relativistic "second order Poisson equation" is presented in a gauge where the hydrodynamical inhomogeneities coincide with their Newtonian counterparts exactly for a perfect fluid with constant equation of state. We use this constraint to introduce primordial non-Gaussianity in the density contrast in the framework of General Relativity. We then derive expressions that can be used as the initial conditions of N-body codes for structure formation which probe the observable signature of primordial non-Gaussianity in the statistics of the evolved matter density field.

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Section: Non-gaussian Initial Conditions For Numerical Simulationsmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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The Poisson equation at second order in relativistic cosmology

Hidalgo

Christopherson

Malik

2013

J. Cosmol. Astropart. Phys.

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“…23,24 Under the condition of supersaturation, the solid carbon phase will be nucleated and the nucleation will take place at the site of the lowest nucleation barrier. This precipitation takes place when the activity of carbon in the gas phase is higher than that in the solid phase (supersaturation).…”

Section: Ion-solvent and Ion-induced Dipole Interactionsmentioning

confidence: 99%

Theory of the charged cluster formation in the low pressure synthesis of diamond: Part I. Charge-induced nucleation

Jang

Hwang

1998

J. Mater. Res.

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Based on several experimental observations, Hwang et al. recently proposed "the charged cluster model" [J. Cryst. Growth, 162, 55 -68 (1996)] to disentangle the "puzzling thermodynamic paradox" encountered in the gas-activated chemical vapor deposition (CVD) of diamond. Many unusual phenomena observed in the CVD diamond process can be successfully approached by the charged cluster model. However, there are a couple of important subjects still unsolved quantitatively. The first question is connected with the main driving force for this unusual nucleation in the gas phase. The second issue is related to the difference in the thermodynamic stability between graphite and diamond for a nanometer-sized cluster during the growth. In this study, we have theoretically examined the thermodynamic driving forces for the charge-induced nucleation, in general, and have applied this idea to the nucleation of the charged carbon-atom cluster. It was shown that the short-range ion-induced dipole interaction and the ion-solvation electrostatic effect (Born term) were mainly responsible for this unusual nucleation in the gas phase. The theoretical analysis presented in this article is quite generic and, thus, can be applied to any process that involves the charge-induced nucleation.

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“…A comparison with thermodynamic calculations applied to diamond [29] and Sic [30] CVD (using CH4!) supports the assumption that graphitic carbon will be deposited at temperatures above 1200°C and 1% C3Hs but etched in pure Hz.…”

Section: Surface Modificationmentioning

confidence: 99%

Characterization of Buffer Layers for SiC CVD

et al. 1995

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Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations ranging from 0.025-1 5%. RHEED investigations have shown single crystalline SiC as well as additional phases depending on the propane concentration. A set of kinetic phase diagrams were determined. The chemical nature was examined by AES. At concentrations below 0,1% additional silicon and an increasing number of defects were found. The growth on (100) substrates has shown a change in orientation toward (111). Above 0.6% a carbon rich polycrystalline layer covering completely the surface was formed. The carbon has both graphitic and carbidic nature. The graphitic content could be decreased by post deposition H2 annealing without changing the polycrystalline nature of this top layer. Best crystallinity were found at 1250°C, 0.15% propane and 30-90 S

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Thermodynamic analysis of the chemical vapor deposition of diamond in the C-H, C-O and C-H-O systems

Cited by 20 publications

References 14 publications

The Poisson equation at second order in relativistic cosmology

The Poisson equation at second order in relativistic cosmology

Theory of the charged cluster formation in the low pressure synthesis of diamond: Part I. Charge-induced nucleation

Characterization of Buffer Layers for SiC CVD

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