1994
DOI: 10.1557/jmr.1994.0125
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Thermochemistry in the system Cu–In–S at 723 K

Abstract: A thermochemical analysis is performed in the system Cu-In-S at 723 K. Free energies of In6S7, In417S583, "In2S3", Cugsjln^, and CuIn5S8 have been estimated, the numerical values (kJ/mol) of which are -1285, -97780, -481.1, -31680, and -1444. The free energy (kJ/mol) of CuInS2 is calculated from the relation G° = (-306.1 ± 54.4) + 0.50927 -1.397 10~5 T2 -0.09468T In T + 268.27-1, which is obtained from published assessed standard formation enthalpy and specific heat and entropy data. The free energy of the Cu-… Show more

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Cited by 23 publications
(14 citation statements)
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“…43 A more recent experimental study of the CuInS 2 -In 2 S 3 subsection of the ternary phase field 44 found similar solid phase structures and transition temperature as those reported by Binsma, including the congruent melting of the indium-rich phase with a spinel structure and compositions around that of the compound CuIn 5 S 8 . They also found, however, an intermediate phase with a fairly narrow homogeneity range around the 62.5 mol% In 2 S 3 composition of the compound Cu 3 In 5 S 9 , which was reported to exhibit a monoclinic structure.…”
Section: The Cu-in-s (Cisu) Materials Systemsupporting
confidence: 63%
“…43 A more recent experimental study of the CuInS 2 -In 2 S 3 subsection of the ternary phase field 44 found similar solid phase structures and transition temperature as those reported by Binsma, including the congruent melting of the indium-rich phase with a spinel structure and compositions around that of the compound CuIn 5 S 8 . They also found, however, an intermediate phase with a fairly narrow homogeneity range around the 62.5 mol% In 2 S 3 composition of the compound Cu 3 In 5 S 9 , which was reported to exhibit a monoclinic structure.…”
Section: The Cu-in-s (Cisu) Materials Systemsupporting
confidence: 63%
“…54 As compared to the use of Cu 2-x S precursor template, the formation of CuInS 2 from In 2 S 3 is energetically favorable. 55 For example, Lei and co-workers 56 fabricated CuInS 2 NCs by using solvothermal method on the basis of micrometer-sized spinel In 3-x S 4 templates. Recent advances in colloidal synthesis provided layered In 2 S 3 NCs including nanoplates, nanosheets and nanobelts.…”
Section: Introductionmentioning
confidence: 99%
“…This model assumes that the S and Se incorporation in CIGSS is controlled by the kinetics of chemisorption of the chalcogen species and incorporation into the chalcopyrite lattice. This is justified by the following observations: (i) the evaporation pressure of S [11] and Se [12] is much greater than the vacuum during film growth so that the incorporation of S and Se into the film is controlled by its reaction with Cu, In, and Ga; (ii) since the reaction temperature is more than 300°C below the melting temperature of the four extremes of ternary chalcopyrites [13,14,15,16,17] the driving force to form the chalcopyrite phase from the vapor is sufficient with either S or Se [ 18,19,20]; and (iii) the growth rate is controlled by the fluxes of Cu, In, and Ga, and the relative compositions of the groups I and III species in the films match those of the fluxes. The solid lines in Figure 1 fitting the data for CIGSS samples were determined from the following simple equation derived from the kinetic model for chalcogen incorporation [10].…”
Section: Results: Uniform Depositionmentioning
confidence: 99%