Thermochemical etching effect on CVD diamond film in an oxygen atmosphere

Uchida, Nozomu; Kurita, Tsutomu; Uematsu, Keizo; Saito, Katsuichi

doi:10.1007/bf00725813

Cited by 16 publications

(8 citation statements)

References 6 publications

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“…Usually, it is oxygen but not hydrogen that has been used to etch diamond, and only uniform etching occurs. [79][80][81][82][83][84][85] In Ref. 6, however, a high density of columnar structures with a diameter of 10 nm and a length of 300 nm was formed by oxygen plasma etching of a polycrystalline diamond film under a negative self bias of −300 to −400 V. The columnar structures were diamond, and not redeposited diamond nanocrystals, unlike the present results.…”

Section: Fiber Formation Mechanismcontrasting

confidence: 56%

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties

et al. 2003

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Polycrystalline diamond films, single crystal bulk diamonds, and diamond powder were treated in microwave plasma of hydrogen at 1.6 torr under a negative direct-current bias of −150 to −300 V without metal catalyst. It was found that fibrous structures, uniformly elongated along the direction normal to the specimen surface, were formed on the diamond surfaces. Similar experiments for glasslike carbon resulted in conical structures with frizzy fibers at the tops. Transmission electron microscopy measurements indicated that the fibers formed on diamond consisted of randomly oriented diamond nanocrystals with diameters of less than 10 nm, while the conical structures formed on glasslike carbon consisted of graphite nanocrystals. Field emission measurements of the fibrous specimens exhibited better emission efficiency than untreated ones. The field emission electron microscopy of the fibrous glasslike carbon showed a presence of discrete electron emission sites at a density of approximately 10,000 sites/cm2.

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Section: Fiber Formation Mechanismcontrasting

confidence: 56%

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties

et al. 2003

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“…/j [14] where the dependence of E on the mobility was exploited as ~ = E0tx. In the preceding, it can be easily verified that both the term under square root in the denominator and the logarithm are negligible.…”

Section: U(t) = ~ ~U-~ X Hoj~-(ho~/4kt)mentioning

confidence: 99%

“…This was Paper 499 presented at the Seattle, WA, Meeting of the Society, Oct. [14][15][16][17][18][19]1990.…”

mentioning

confidence: 99%

Defect Clustering and Boron Electrical Deactivation in p‐Doped Polycrystalline Diamond Films

Narducci

Guarnieri

Cuomo

1991

J. Electrochem. Soc.

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Heavily doped polycrystalline thin diamond films were prepared by chemical vapor deposition. Boron was introduced in the films during the deposition. The electrical activity of acceptors was studied using dc polarization technique and bulk admittance spectroscopy. In the concentration range of 10'7-1020 cm -3 we have observed the occurrence of Hubbard interaction and band splitting. The conductivity of the films is mobility limited, and the pre-exponential factor of (T(T) decreases as the total concentration of boron increases. The occurrence of boron-defect clustering has been detected, and its effect on the majority-carrier injection level is discussed.Doping of diamond under controlled conditions is of paramount importance in the development of high-temperature high-power electronic devices. However, in spite of the large efforts in this direction, reliable control over the majority-carrier level in doped diamond has not been attained.

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“…In air, natural diamond begins to oxidize at around 900 K and exhibits a strong orientation effect. Thermal oxidation of natural diamond has been studied extensively (1)(2)(3)(4), and just recently several papers dealing with oxidation of CVD diamond have also appeared in the literature (5)(6)(7)(8)(9)(10)(11)(12)(13)(14). In this paper, the relative differences in the oxidation characteristics of CVD diamond and natural diamonds are examined.…”

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confidence: 99%

Relative Oxidation Behavior of Chemical Vapor Deposited and Type II a Natural Diamonds

Sun

Alam

1992

J. Electrochem. Soc.

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Thermal oxidation characteristics of chemical vapor deposited (CVD) diamond films prepared by the hot filament method along with (111) and (100) oriented type II a natural diamond wafers were investigated in flowing oxygen at atmospheric pressure and in the temperature range 973–1173 K by thermogravimetry. Partially oxidized samples were also analyzed by x‐ray diffraction, Raman spectroscopy, and electron microscopy. On oxidation, diamond films attached to the silicon wafer turned black, while free standing diamond films did not undergo any color change. Both x‐ray diffraction and Raman spectroscopy failed to identify the transformation of diamond to nondiamond carbon forms. Electron microscopy and thermogravimetry indicated that CVD films were least resistant to oxidation followed by (111) surface and (100) surface of natural diamond. The oxidation rates of the CVD films which were dominated by (111) faces are close to those of (111) oriented natural diamond wafers. The apparent activation energies for the oxidation of the films, (111) and (100) oriented wafers are 229, 260, and 199 kJ/mole, respectively, suggesting that the films and the wafers oxidize by direct reaction between diamond and oxygen to CO and CO2 .

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Thermochemical etching effect on CVD diamond film in an oxygen atmosphere

Cited by 16 publications

References 6 publications

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties

Defect Clustering and Boron Electrical Deactivation in p‐Doped Polycrystalline Diamond Films

Relative Oxidation Behavior of Chemical Vapor Deposited and Type II a Natural Diamonds

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