2003
DOI: 10.1063/1.1565180
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Thermochemical description of dielectric breakdown in high dielectric constant materials

Abstract: A thermochemical/molecular model is developed for breakdown in high dielectric constant materials and the model suggests that a fundamental relationship exists between dielectric breakdown strength (Ebd) and dielectric constant (k). The model indicates that Ebd should show an approximate (k)−1/2 dependence over a wide range of high dielectric constant materials. The model also predicts that the field-acceleration parameter (γ), from time-dependent dielectric breakdown (TDDB) testing, should increase with diele… Show more

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Cited by 373 publications
(227 citation statements)
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“…E vs. 1/E vs. √ E models). [108][109][110][111][112][113][114] Unfortunately, low-k ILD materials exhibit significantly reduced TDDB lifetimes relative to SiO 2 , and this is a significant, well documented concern for low-k/Cu interconnect reliability. [115][116][117][118] As will discussed later, low-k DB materials have also been observed to exhibit reduced TDDB lifetimes relative to a-Si 3 N 4 and a-SiN:H.…”
Section: Low-k Ild Cu Cumentioning
confidence: 99%
“…E vs. 1/E vs. √ E models). [108][109][110][111][112][113][114] Unfortunately, low-k ILD materials exhibit significantly reduced TDDB lifetimes relative to SiO 2 , and this is a significant, well documented concern for low-k/Cu interconnect reliability. [115][116][117][118] As will discussed later, low-k DB materials have also been observed to exhibit reduced TDDB lifetimes relative to a-Si 3 N 4 and a-SiN:H.…”
Section: Low-k Ild Cu Cumentioning
confidence: 99%
“…2,3 The bond breakage rate depends on the bond vibration frequency and the probability that the chemical bond will receive enough thermal energy to be broken. Moreover, this model accounts for the role of the external field (E), which lowers the energy needed for the bond-breakage.…”
Section: A the Thermochemical Modelmentioning
confidence: 99%
“…For this purpose, we adopted the thermochemical model 2,3,15 formalisms where the probability of breaking a Si-O bond is described as…”
Section: An Oxygen Vacancy Generation Mechanismmentioning
confidence: 99%
“…Taking into account that fact that only a certain energy density might be stored in a dielectric (equivalent to a limit in electrostatic pressure), the value E max of metal oxide dielectrics is given by an empirical relationship [5]: [11], and solid solutions of [12], possess values of T C ε as high as a few 10 −2 K −1 . Here, in the limit of E = E max , Eq.…”
Section: Electrocaloric Effectmentioning
confidence: 99%