Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers

Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD

“…These values are similar than those reported for a-Ge:H [9,10] as is expected, since the presence of nanocrystals in the amorphous matrix does not have a strong effect on the properties of the amorphous materials (as E a or E g ), but makes them much more stable, with better transport properties as larger electron mobility (μ e ).…”

Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors

“…1, is an indication of the polymorphous nature of the films produced. That result was confirmed with the electrical measurements of the films, where E a and TCR were extracted, since these values are similar to those of a-Si:H and a-Ge: H [13,14].…”

“…The largest conductivity measured in the pm-Ge:H films was of above 2 × 10 − 4 (Ω cm) − 1 , which is one order of magnitude shorter than that of a-Si:H,B, and one order of magnitude larger than that of the intrinsic a-SiGe:H film, which was studied in our previous work [13,14]. Even though the pm-Ge:H conductivity is one order of magnitude shorter than that of a-Si:H,B, its E a (0.39 eV) is almost twice than that of a-Si:H,B (0.22 eV).…”

“…The E a , TCR, R I and R U values obtained in both series of films (series #1: pm-Si:H and series #2: pm-Ge:H) are shown in Table 1 and are compared with a-Si:H [13], a-SiGe:H [14] and boron doped a-Si: H (a-Si:H,B) [4], the latter is currently used in commercial microbolometer arrays. In Table 1 it is shown that the responsivity values of the polymorphous films deposited on glass are comparable or even larger than those reported for a-Si:H,B deposited on SiN x microbridges.…”

Thin film membrane based on a-SiGe: B and MEMS technology for application in cochlear implants

“…Intrinsic a-SiGe:H has lower resistivity than a-Si: H or nc-Si: H and moreover depending on the Ge content the resistivity could change in several orders of magnitude as is reported in [16,17]. It means that aSiGe: H is a more versatile material than a-Si: H or nc-Si: H and its properties (resistivity and activation energy) can be tailored in a wide range, according to a specific application.…”