Thermo-optic coefficient of silicon at 1550 nm and cryogenic temperatures

Komma, Julius; Schwarz, Christian; Hofmann, G.; Heinert, D.; Nawrodt, R.

doi:10.1063/1.4738989

Cited by 248 publications

(133 citation statements)

References 17 publications

(18 reference statements)

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“…More precisely, for silicon the thermo-refractive coefficient will decrease by a factor 100 from room temperature to 20 K [17], hence reducing the gradient of refractive index responsible for the deviation of the probe beam. That would be the major effect, the change in thermal conductivity [18] and specific heat having a smaller effect [19].…”

Section: Bulk Absorption Measurement At Lmamentioning

confidence: 99%

Measurement of the optical absorption of bulk silicon at cryogenic temperature and the implication for the Einstein Telescope

Degallaix

Komma

Forest

et al. 2014

Class. Quantum Grav.

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We report in this article on the measurement of the optical absorption of moderately doped crystalline silicon samples at 1550 nm, which is a candidate material for the main optics of the low temperature interferometer of the Einstein Telescope (ET). We observe a nearly constant absorption from room temperature down to cryogenic temperatures for two silicon samples presenting an optical absorption of 0.029 cm −1 and 780 ppm cm −1 , both crystals doped with boron. This is in contradiction to what was assumed previously-a negligible optical absorption at low temperature due to the carrier freezeout. As the main consequence, if the silicon intrinsic absorption can not be lowered, the cross section of the mirror suspension of the ET must be increased to be able to carry away the excess heat generated by the partially absorbed laser beam during the operation of the interferometer.

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Section: Bulk Absorption Measurement At Lmamentioning

confidence: 99%

Measurement of the optical absorption of bulk silicon at cryogenic temperature and the implication for the Einstein Telescope

Degallaix

Komma

Forest

et al. 2014

Class. Quantum Grav.

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“…Thermal-expansion-based straining, used to produce χ (2) in silicon [150], could benefit from the larger deposition-tooperation temperature difference; χ (2) and χ (3) electro-optic modulators could be invaluable for low-temperature switching. Finally, the effort expended to make silicon photonics athermal would be unnecessary: silicon's low-temperature thermo-optic coefficient is 10 000 times smaller than its room-temperature value [149], [151]. We can be optimistic that silicon photonics can accommodate either front-or back-end integrated electronics, for implementing the feedforward control required (Fig.…”

Section: A Integrationmentioning

confidence: 97%

Silicon Quantum Photonics

Silverstone

Bonneau

O’Brien

et al. 2016

IEEE J. Select. Topics Quantum Electron.

258

194

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Integrated quantum photonic applications, providing physially guaranteed communications security, sub-shot-noise measurement, and tremendous computational power, are nearly within technological reach. Silicon as a technology platform has proven formibable in establishing the micro-electornics revoltution, and it might do so again in the quantum technology revolution. Silicon has has taken photonics by storm, with its promise of scalable manufacture, integration, and compatibility with CMOS microelectronics. These same properties, and a few others, motivate its use for large-scale quantum optics as well. In this article we provide context to the development of quantum optics in silicon. We review the development of the various components which constitute integrated quantum photonic systems, and we identify the challenges which must be faced and their potential solutions for silicon quantum photonics to make quantum technology a reality

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“…We can see a ∼5 dB intra-band power dip 50 pm far away from the maximum power at O 1 . Since silicon is a temperature sensitive material with a large thermo-optic coefficient at 1550 nm [14] the MRR's resonance will shift about 50 pm and lead to a 5 dB increase of the insertion loss of the path I 1 -O 1 if the temperature fluctuates with 0.5 K The depth of the intra-band dips increase as the coupling between the ring and bus waveguides becomes stronger. This makes the device unable to realize multi-wavelength routing and not suitable to be used in PNoC.…”

Section: Basic Operation Elementsmentioning

confidence: 99%

Four-Port Silicon Multi-Wavelength Optical Router for Photonic Networks-on-Chip

Shao

Yang

et al. 2013

IEEE Photon. Technol. Lett.

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Abstract-We design and fabricate a four-port wavelengthselective optical router on silicon-on-insulator wafer for photonic networks-on-chip. The router consists of four basic operation blocks. Each is constructed by one microring resonator (MRR) based add-drop filter rather than the traditional two microrings based 2 × 2 optical crossbar. It can provide multiwavelength routing for each path to increase the aggregate data transmission bandwidth. The possible 12 I/O routing paths are experimentally observed in the transmission spectra and each of them has the ability to route four group wavelengths simultaneously in the measured spectral range. The device has a small footprint (∼78 × 100 µm 2 ) and low power consumption (6.58 mW).

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Thermo-optic coefficient of silicon at 1550 nm and cryogenic temperatures

Cited by 248 publications

References 17 publications

Measurement of the optical absorption of bulk silicon at cryogenic temperature and the implication for the Einstein Telescope

Measurement of the optical absorption of bulk silicon at cryogenic temperature and the implication for the Einstein Telescope

Silicon Quantum Photonics

Four-Port Silicon Multi-Wavelength Optical Router for Photonic Networks-on-Chip

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