2014
DOI: 10.1088/0264-9381/31/18/185010
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Measurement of the optical absorption of bulk silicon at cryogenic temperature and the implication for the Einstein Telescope

Abstract: We report in this article on the measurement of the optical absorption of moderately doped crystalline silicon samples at 1550 nm, which is a candidate material for the main optics of the low temperature interferometer of the Einstein Telescope (ET). We observe a nearly constant absorption from room temperature down to cryogenic temperatures for two silicon samples presenting an optical absorption of 0.029 cm −1 and 780 ppm cm −1 , both crystals doped with boron. This is in contradiction to what was assumed pr… Show more

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Cited by 9 publications
(18 citation statements)
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References 24 publications
(39 reference statements)
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“…The band-band absorption α BB is the lower absorption limit for intrinsic crystalline silicon. Preliminary results obtained by Degallaix et al [22] point to a light-intensity-dependent absorption in silicon. An estimation based on the power density in our setup showed that our result is not significantly influenced by that effect.…”
Section: Discussionmentioning
confidence: 89%
“…The band-band absorption α BB is the lower absorption limit for intrinsic crystalline silicon. Preliminary results obtained by Degallaix et al [22] point to a light-intensity-dependent absorption in silicon. An estimation based on the power density in our setup showed that our result is not significantly influenced by that effect.…”
Section: Discussionmentioning
confidence: 89%
“…We expect Debye screening to suppress diffusion processes thus reducing the fluctutations in the optical elements. Because of the residual doping in the large test mass substrates required for GW detection a majority charge carrier is present [21]. Without loss of generality we assume electrons to be the majority charge carriers.…”
Section: Problem Statementmentioning
confidence: 99%
“…At this time large high-purity silicon samples can be produced with the magnetically assisted Czochralski technique with a resistivity of up to 10 kΩcm. To account for production difficulties we are looking at n-type silicon with a worse resistivity of 1 kΩcm which corresponds to a doping density of around 4.4 • 10 12 1 cm 3 , which is equivalent to a resistivity of 1 kΩcm at room temperature [21]. In order to calculate the mean carrier density n 0 as a function of the doping density a model for semiconductors with no compensation (no acceptors) has been used [29]:…”
Section: Computation Of Tccr Noisementioning
confidence: 99%
“…In the case of Czochralski grow silicon the absorption is in the range of several 100's ppm/cm. For floating zone grown silicon, absorption as low as 5 ppm/cm has been measured but size is limited to about 10 cm diameter [124]. In the case of sapphire the best absorption is around 30 ppm/cm with sizes in the range of 20 cm diameter [125].…”
Section: The Cryogenic Challengesmentioning
confidence: 99%