Thermische Verschiebung der langwelligen Grenze der Grundgitterbasorption von Cadmiumsulfid

Seiwert, R.

doi:10.1002/andp.19494410127

Cited by 5 publications

(9 citation statements)

References 7 publications

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“…The density function n[c~} of (IV, 14) and the corresponding m[_c~] = (l/q)(d/dc)M(w 2 ) of (IV, 28) are both very sharply increasing functions near c = 0 with weak long wings in the region of large | c | values.…”

Section: (B) More Accurate Methodsmentioning

confidence: 97%

“…II and III-by calculating the distribution function w[_z~\. Equations (II, 16a) and (II, 20a) for w [z~] and where p and q are the fractions of M-and m-masses in the chain and a, j3 are given by (IV,2). We are considering a region above the frequency limit of the M chain, i.e., a< -1.…”

Section: (B) More Accurate Methodsmentioning

confidence: 98%

“…(II,6) Then (3) implies z n+ i= l/(2-M n u 2 -z n ) for « = 1,2,7) with the boundary condition zi = 0, z N+1 =cc. (H,8) Equations (II, 6) and (II, 7) establish a continuous connection between <p n and c?…”

Section: (B) New Formulation Of the Eigenvalue Problemmentioning

confidence: 97%

“…wH=E^''2r 2 wCr r 1 [2]], wH>o, We show first that, provided a solution W(<p) of (A, 6) exists, this solution is continuous (a) and unique (fi).…”

Section: Appendix Imentioning

confidence: 98%

“…It is easily seen that this equation [where a, /?, and X' are given by (IV,2) and (IV, 4)] determines exactly two eigenfrequencies co s + and co s~ above the limit frequency of the M chain, provided that m<\M. This frequency co is therefore the resonance frequency of a single mass m in a long chain of masses M. [The frequency limit of the pure M chain is given by co 2 = (4/Jf) <d> 2 .]…”

Section: Stes-mentioning

confidence: 98%

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Disordered One-Dimensional Crystals

1957

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A mathematical method is developed which gives fairly generally the density of eigenstates for onedimensional disordered systems. The method is applied first to a disordered linear chain of elastically coupled masses. The results for the energy spectrum are closely related to those obtained by Dyson.Then we consider the electronic energy-states in a one-dimensional disordered crystal, represented by a series of 5-function potentials of different strengths, randomly distributed.We solve the resulting functional equation explicitly in that case which corresponds to a uniform crystal with a small amount of impurities; that is, we find the shape of the impurity bands.

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Section: (B) More Accurate Methodsmentioning

confidence: 97%

Section: (B) More Accurate Methodsmentioning

confidence: 98%

Section: (B) New Formulation Of the Eigenvalue Problemmentioning

confidence: 97%

“…wH=E^''2r 2 wCr r 1 [2]], wH>o, We show first that, provided a solution W(<p) of (A, 6) exists, this solution is continuous (a) and unique (fi).…”

Section: Appendix Imentioning

confidence: 98%

Section: Stes-mentioning

confidence: 98%

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Disordered One-Dimensional Crystals

1957

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High field domains occurring at low threshold voltages in CdS-type photoconductors

Koepp

Urbelis

1970

Phys. Stat. Sol. (a)

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Field emission studies on clean symmetrical surfaces of cadmium sulfide

Marien

Loosveldt

1971

Phys. Stat. Sol. (a)

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Clean smooth symmetrical field emission patterns of CdS single crystals of about 2.6 x x lo8 Clem bulk resistivity are obtained by a cleaning procedure based upon hydrogenpromoted field evaporation a t room temperature. The "best image voltage" a t 77 O K is easily reproducible to 3% and by heating a t about 1120 OK, faceting occurs. The value 4.97 eV of the electron affinity is calculated from the Fowler-Nordheim (F-N) equation modified for the case of a degenerate surface with field penetration. The F-N plot shows a hysteresis a t fields higher than 4 x lo7 Vcm-l; this could be explained among other interpretations by an adsorption starting a t high fields. Under conditions of severe contamination, the work function increases to 1.59 eV. L'hmission de champ de monocristaux de CdS ayant une resistivite de volume voisine de 2,6 x lo8 Qcm donne des images propres, symetriques apr&s un nettoyage base sur 1'6vaporation de champ dans l'hydroghe b temperature ordinaire. Le "voltage de meilleure image" B 77 O K est facilement reproductible b 3% et suite b un chauffage aux environs de 1120 OK, certaines facettes grandissent. La valeur 4,97 eV de l'affinite Blectronique est calculee b partir de 1'6quation de Fowler-Nordheim (F-N) modifiee dans le cas d'une surface dBg6neree avec penetration de champ. Les courbes F-N montrent une hysteresis pour des champs supBrieurs b 4 x lo7 Vcm-l; ce qui pourrait s'expliquer parmi d'autres possibilites d'interprktation par une adsorption dBmarrant b champ Bled. Dans les conditions d'extr6me contamination, l'augmentation du travail d'extraction s'8lbve b 1,59 eV.

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Thermische Verschiebung der langwelligen Grenze der Grundgitterbasorption von Cadmiumsulfid

Cited by 5 publications

References 7 publications

Disordered One-Dimensional Crystals

Disordered One-Dimensional Crystals

High field domains occurring at low threshold voltages in CdS-type photoconductors

Field emission studies on clean symmetrical surfaces of cadmium sulfide

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