Thermally stable WTiAu non-alloyed ohmic contacts on In0.5Ga0.5As for GaAsAlGaAs heterojunction bipolar transistor applications

Abstruct-The metallurgical stability of ohmic contacts: P t ,PtlTi, Au/Ti, AdPt/Ti, and AulPtlTiMT, on a 500 A thick p+-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature. All contacts were stable after a 300°C-30 s anneal. Pt contact failed at 350°C whereas €"i, Au/Ti, and Au/Pt/Ti contacts failed at 400°C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBT's with AulPt/TiMT contact were still functional after a 400°C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions.

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Thermally stable WTiAu non-alloyed ohmic contacts on In0.5Ga0.5As for GaAsAlGaAs heterojunction bipolar transistor applications

Cited by 3 publications

References 9 publications

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Electrical and structural properties of GeMoW ohmic contact to an In0.5Ga0.5As cap layer on n-Type GaAs

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Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's

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