Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$  Passivation

Hirama, Kazuyuki; Sato, Hisashi; Harada, Yoshio; Yamamoto, Hideki; Kasu, Makoto

doi:10.1109/led.2012.2200230

Cited by 66 publications

(43 citation statements)

References 11 publications

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“…2 The fullerene molecule C 60 9 and its fluorinated variants C 60 15 achieving higher temperature operation. 16 Although this work has yielded very promising device performance, the exact mechanism that is responsible for the hole accumulation of diamond passivated by Al 2 O 3 is still a point of investigation. Similar work involving ALD deposition of Al 2 O 3 and HfO 2 has been explored for use in H-diamond MOSFETs.…”

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confidence: 98%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

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Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping

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confidence: 98%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

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“…by atomic layer deposition (ALD) of Al 2 O 3 as passivation and gate insulator (12,13). The temperature effect on the HTD MOSFET up to 500K is measured and it opens the way to apply HTD devices in high-temperature environment.…”

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confidence: 99%

Simulation of Thermal Effects on Hydrogen-Terminated Diamond MOSFETs

et al. 2013

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The DC characteristics of hydrogen-terminated diamond (HTD) MOSFETs are simulated in the temperature range from 140 to 500K. The temperature-dependent parameters, such as band gap width, intrinsic/extrinsic carrier density, hole mobility and hole saturation velocity, are calculated and compared with measured data. The simulated output/transfer characteristics show good agreement with experiments, and the maximum drain current shows smaller thermal variation than the low-field mobility does, which is due to the existence of transverse field during device operation. In addition, the pinch-off voltage is found to change linearly with temperature and the temperature coefficient is as small as 0.26mV/K. The thermodynamic simulation reveals that for HTD MOSFETs, the lattice temperature will increase only 30K when the device is operated at a current density as high as 1A/mm.

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“…[5] From the CV measurement we estimate that the dielectric constant of the Al2O3 layer is 7.2 eV which is similar to values reported by other groups. [6] Interface trap analysis of the Al2O3 / hydrogenated diamond interface, correcting for series resistance of the contacts and access regions, [7] indicated good band bending efficiency [8] as shown in figure 4(a) and a higher trap density in the FET hydrogenated by an H2 environment anneal as shown in figure 4(b). These traps are shallow as indicated by the ionization energy level which is limited by the frequency of the CV meter.…”

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confidence: 91%

Charge Trapping Analysis of High Speed Diamond FETs

et al. 2017

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Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond -Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface.

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Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Cited by 66 publications

References 11 publications

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Simulation of Thermal Effects on Hydrogen-Terminated Diamond MOSFETs

Charge Trapping Analysis of High Speed Diamond FETs

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