Thermally grown Nb-oxide for GaN-based MOS-diodes

Bhardwaj, Navneet; Upadhyay, Bhanu B.; Yadav, Yogendra Kumar; Surapaneni, Sreenadh; Ganguly, Swaroop

doi:10.1016/j.apsusc.2021.151332

Cited by 3 publications

(2 citation statements)

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“…Nb 2 O 5 has a high relative dielectric constant in the range of 29-200 based on its quality and various phases. The characteristics of thermally grown Nb 2 O 5 as a gate dielectric for MOS diodes are already reported [39]. This work explores the gate leakage current, direct-current (DC), and radio-frequency (RF) characteristics of thermally grown Nb 2 O 5 -based MOS-HEMTs.…”

Section: Introductionmentioning

confidence: 98%

“…The sample is then annealed rapid thermal annealing (RTA) at 850 °C for 30 s in N 2 ambience [40]. The oxide is formed in a selective area using electron beam lithography (EBL), and a thin film of Nb (4 nm) metal is deposited by sputtering followed by thermal oxidation at an optimized temperature of 500 °C in O 2 (1000 sccm) ambient for 20 min [39]. The Ni/Au 30/100 nm stack is deposited in an electron-beam evaporator under a high vacuum for Schottky contact on the patterned Nb-oxide.…”

Section: Introductionmentioning

confidence: 99%

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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric

Bhardwaj¹,

Upadhyay²,

Parvez³

et al. 2022

Phys. Scr.

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This work demonstrates the improvement in DC and RF characteristics and a reduction in the gate leakage current for thermally grown Nb2O5 as a gate dielectric in AlGaN/GaN metal–oxide–semiconductor high electron-mobility transistors (MOS-HEMTs). The MOS-HEMTs with an amorphous 10 nm thick Nb2O5 as the gate dielectric show a reduced gate leakage current of 10-9 A/mm. Nb2O5 thin film creates a tensile strain in the AlGaN layer, enhancing the density of two-dimension electron gas (2-DEG). The performance of the device also improves in terms of saturation drain current, peak transconductance, subthreshold swing, and unity current gain frequency. An increase in the source-to-drain ON/OFF current ratio to 108 and a significant reduction in the subthreshold leakage current by at least two orders of magnitude are measured compared to the control HEMTs.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric

Bhardwaj¹,

Upadhyay²,

Parvez³

et al. 2022

Phys. Scr.

Self Cite

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Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations

Mikulics

Adam²,

Sobolewski³

et al. 2022

FlatChem

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Niobium oxides films on GaN: Photoelectron spectroscopy study

Lewandków

Mazur²,

Grodzicki³

2022

Thin Solid Films

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Thermally grown Nb-oxide for GaN-based MOS-diodes

Cited by 3 publications

References 31 publications

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric

Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations

Niobium oxides films on GaN: Photoelectron spectroscopy study

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Thermally grown Nb-oxide for GaN-based MOS-diodes

Cited by 3 publications

References 31 publications

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric

Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations

Niobium oxides films on GaN: Photoelectron spectroscopy study

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Product

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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric