“…In recent years, with the advances in the growth and optical characterization of 2D materials, 2D materials are gradually showing promising applications in both photonics and optoelectronics [1][2][3][4]. Monolayer (ML) transition metal dichalcogenides (TMDCs) are typical 2D layered materials that are widely used in photodetectors [5,6], field effect transistors [7,8], and light-emitting devices [9,10] because * Author to whom any correspondence should be addressed.…”
Van der Waals heterostructures formed by inorganic perovskites and transition metal dichalcogenides (TMDCs) have promising applications in photonics and optoelectronics. However, there are few studies on the properties of CsPbBr3/TMDC at low temperatures. Here, we demonstrate van der Waals epitaxy of CsPbBr3 nanowires (NWs), nanoplates (NPs) and nanocones (NCs) on monolayer (ML) WSe2, and investigate the lattice dynamics of the heterostructure at low temperatures using temperature-dependent Raman spectroscopy. In addition, temperature-dependent photoluminescence (PL) spectroscopy shows that the type II band alignment between CsPbBr3 and ML WSe2 leads to a broad emission peak at the low-energy side of the ML WSe2 emission at low temperatures. Meanwhile, a high-energy peak appears near the CsPbBr3 emission below 133 K, which may be related to the phase transition of CsPbBr3 from the cubic to the orthorhombic phase. These findings are important for the research and development of related optoelectronic devices.
“…In recent years, with the advances in the growth and optical characterization of 2D materials, 2D materials are gradually showing promising applications in both photonics and optoelectronics [1][2][3][4]. Monolayer (ML) transition metal dichalcogenides (TMDCs) are typical 2D layered materials that are widely used in photodetectors [5,6], field effect transistors [7,8], and light-emitting devices [9,10] because * Author to whom any correspondence should be addressed.…”
Van der Waals heterostructures formed by inorganic perovskites and transition metal dichalcogenides (TMDCs) have promising applications in photonics and optoelectronics. However, there are few studies on the properties of CsPbBr3/TMDC at low temperatures. Here, we demonstrate van der Waals epitaxy of CsPbBr3 nanowires (NWs), nanoplates (NPs) and nanocones (NCs) on monolayer (ML) WSe2, and investigate the lattice dynamics of the heterostructure at low temperatures using temperature-dependent Raman spectroscopy. In addition, temperature-dependent photoluminescence (PL) spectroscopy shows that the type II band alignment between CsPbBr3 and ML WSe2 leads to a broad emission peak at the low-energy side of the ML WSe2 emission at low temperatures. Meanwhile, a high-energy peak appears near the CsPbBr3 emission below 133 K, which may be related to the phase transition of CsPbBr3 from the cubic to the orthorhombic phase. These findings are important for the research and development of related optoelectronic devices.
“…Raman spectroscopy is a powerful analytical technique used to study the stability and degradation properties of materials, − and it is particularly useful for assessing MXene quality during fabrication of devices and sensors. It is sensitive to interactions between chemical species and alterations in lattice structures, making it applicable to detect the presence of amorphous compounds, as well as traces of transition metal oxides commonly found in the structure of MXene.…”
Extending applications of Ti 3 C 2 T x MXene in nanocomposites and across fields of electronics, energy storage, energy conversion, and sensor technologies necessitates simple and efficient analytical methods. Raman spectroscopy is a critical tool for assessing MXene composites; however, high laser powers and temperatures can lead to the materials' deterioration during the analysis. Therefore, an in-depth understanding of MXene photothermal degradation and changes in its oxidation state is required, but no systematic studies have been reported. The primary aim of this study was to investigate the degradation of the MXene lattice through Raman spectroscopic analysis. Distinct spectral markers were related to structural alterations within the Ti 3 C 2 T x material after subjecting it to thermal-and laser-induced degradation. During the degradation processes, spectral markers were revealed for several specific steps: a decrease in the number of interlayer water molecules, a decrease in the number of −OH groups, formation of C−C bonds, oxidation of the lattice, and formation of TiO 2 nanoparticles (first anatase, followed by rutile). By tracking of position shifts and intensity changes for Ti 3 C 2 T x , the spectral markers that signify the initiation of each step were found. This spectroscopic approach enhances our understanding of the degradation pathways of MXene, and facilitating enhanced and dependable integration of these materials into devices for diverse applications, from energy storage to sensors.
“…The last two decades have belonged to various 2D materials such as graphene, black phosphorus (BP), and transition-metal compounds due to their exceptional properties such as 2D quantum confinement and tuneable layer structure. − These 2D materials offer a wide range of applications ranging from sensors, photodetectors, energy storage, catalysis to health monitoring. − ,− Graphene has been extensively studied due to its superior charge carrier mobility, thermal conductivity, and flexibility . However, its application is hampered by the lack of a band gap .…”
2D monoelemental
materials, particularly germanene and
silicene
(the single layer of germanium and silicon), which are the base materials
for modern electronic devices demonstrated tremendous attraction for
their 2D layer structure along with the tuneable electronics and optical
band gap. The major shortcoming of synthesized thermodynamically very
unstable layered germanene and silicene with their inclination toward
oxidation was overcome by topochemical deintercalation of a Zintl
phase (CaGe2, CaGe1.5Si0.5, and CaGeSi)
in a protic environment. The
exfoliated Ge–H, Ge0.75Si0.25H, and Ge0.5Si0.5H were successfully synthesized and employed
as the active layer for photoelectrochemical photodetectors, which
showed broad response (420–940 nm), unprecedented responsivity,
and detectivity on the order of 168 μA W–1 and 3.45 × 108 cm Hz1/2 W–1, respectively. The sensing capability of exfoliated germanane and
silicane composites was explored using electrochemical impedance spectroscopy
with ultrafast response and recovery time of less than 1 s. These
positive findings serve as the application of exfoliated germanene
and silicene composites and can pave a new path to practical applications
in efficient future devices.
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