Thermally-driven motion of current filaments in ESD protection devices

Pogány, D.; Bychikhin, S.; Denison, M.; Rodin, Pavel; Jensen, N.; Groos, G.; Stecher, M.; Gornik, E.

doi:10.1016/j.sse.2004.11.022

Cited by 17 publications

(22 citation statements)

References 20 publications

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“…The filament speed is between approximately 150 lm/ls and 400 lm/ls, and the speed increased in accordance with the current. It has been reported that the current filament speed increases when higher energy are applied in ESD protection devices [5]. The tests in this research identified the same trend.…”

Section: Filament Speed Between Padssupporting

confidence: 79%

“…This indicates that the current hopped from Pad C to Pad A without passing through middle Pad B. A previous research found that the current filament moved following a temperature gradient [5]. This report did not mention the current movement between the non-neighboring locations.…”

Section: Filament Speed Between Padsmentioning

confidence: 71%

“…To simulate the ununiformity like the real device, the wafer resistivity of the two cells differed by 1%. Since the two cells in this model are independent of each other, the filament movement reported in [5] did not occur. Fig.…”

Section: Filament Speed Between Padsmentioning

confidence: 91%

See 2 more Smart Citations

Analysis of current distribution on IGBT under unclamped inductive switching conditions

Iwahashi

Mizuno

Hara

et al. 2012

Microelectronics Reliability

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Section: Filament Speed Between Padssupporting

confidence: 79%

Section: Filament Speed Between Padsmentioning

confidence: 71%

See 1 more Smart Citation

Analysis of current distribution on IGBT under unclamped inductive switching conditions

Iwahashi

Mizuno

Hara

et al. 2012

Microelectronics Reliability

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“…[4][5][6] The recently observed phenomenon of thermally driven motion of CFs delocalizes heating and hence dramatically improves device robustness. 6,7 CF moves in the direction opposite to the temperature gradient caused by the Joule self-heating and its speed depends on the total current. 7,8 Previously single traveling CFs have been observed at low currents.…”

Section: Introductionmentioning

confidence: 99%

Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor

Mamanee

Johnsson

Rodin

et al. 2009

Journal of Applied Physics

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Traveling multiple current filaments (CFs) are investigated by transient interferometric mapping method in avalanching bipolar n-p-n transistors. The number of CFs can vary for identical current pulses and their averaged number increases with the total current. The CF movement is driven by a temperature gradient in it, caused by the self-heating effect. For pulses of 500 ns duration, the existence of two CFs appears dangerous as it causes a nontrivial premature thermal breakdown (TB), which does not occur when only one CF exists at the same current level. TB occurs due to redistribution of current between the two CFs. The current components flowing through each CF depend on CF temperature and are globally coupled by a fixed device current. When a first CF reaches the device end, it heats up and disappears due to vanishing impact ionization rate in it. When a second traveling CF, taking consequently the whole current, reaches the already preheated device end, a TB event occurs. The transition from two to one filament mode is accompanied by a voltage step of 1 V, which is related to a finite resistance of CF access region.

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“…The non-destructive transient interferometric mapping (TIM) technique is found to be a useful technique for investigation of thermal effects and free carrier injection in ESD protection devices and for verification of TCAD simulation tools [10][11][12][13]. This technique monitors transient changes in refractive index of silicon caused by temperature and free carrier concentration changes [14,15].…”

Section: Introductionmentioning

confidence: 99%

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology

Heer

Domanski

Esmark

et al. 2009

Microelectronics Reliability

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Thermally-driven motion of current filaments in ESD protection devices

Cited by 17 publications

References 20 publications

Analysis of current distribution on IGBT under unclamped inductive switching conditions

Analysis of current distribution on IGBT under unclamped inductive switching conditions

Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology

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