Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Santi, Carlo De; Meneghini, Matteo; Marioli, Michael Simone; Buffolo, Matteo; Trivellin, Nicola; Weig, Thomas; Holc, Katarzyna; Köhler, K.; Wagner, J.; Schwarz, Ulrich; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1016/j.microrel.2014.07.073

Cited by 15 publications

(6 citation statements)

References 14 publications

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“…Dry etching damage can produce nonradiative recombination centers, increase surface recombination velocity, and influence the electrical properties of the epitaxial structure, 14,15) which adversely affects the reliability and lifetime of the final devices. 16,17) Although a (NH 4 ) 2 S treatment has been proposed to reduce the surface recombination velocity 18) from ∼1 × 10 5 cm=s down to 5.8 × 10 2 cm=s and short KOH dips have also been suggested to recover the active region from dry etching damage, 19,20) the effectiveness of such a passivation technique is limited. Poorquality etching can also reduce device performance through the optical scattering loss α s , which is proportional to the product of the square of the root-mean-square (RMS) sidewall surface roughness σ and the core-cladding effective index contrast Δn, and inversely proportional to the emission wavelength of the device.…”

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confidence: 99%

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Megalini

Becerra

Pourhashemi

et al. 2015

Appl. Phys. Express

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We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CA-LDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-µm-wide active region were 4.4 (8.1) kA/cm2, 6.1 (7.7) V, 96.5 (63.5) mW, and 4.7 (6.0) Ω under pulsed conditions and before facet coating, respectively.

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mentioning

confidence: 99%

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Megalini

Becerra

Pourhashemi

et al. 2015

Appl. Phys. Express

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“…For GaN-based LD, ageing induces an increase in the threshold current (Ith), whereas slope efficiency is generally not affected [ 11 , 12 ]; this mechanism is attributed to an increase in non-radiative recombination within the active region of the devices. Operating temperature also plays a role in the degradation, with a minor impact with respect to the driving current [ 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Laser-Based Lighting: Experimental Analysis and Perspectives

et al. 2017

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This paper presents an extensive analysis of the operating principles, theoretical background, advantages and limitations of laser-based lighting systems. In the first part of the paper we discuss the main advantages and issues of laser-based lighting, and present a comparison with conventional LED-lighting technology. In the second part of the paper, we present original experimental data on the stability and reliability of phosphor layers for laser lighting, based on high light-intensity and high-temperature degradation tests. In the third part of the paper (for the first time) we present a detailed comparison between three different solutions for laser lighting, based on (i) transmissive phosphor layers; (ii) a reflective/angled phosphor layer; and (iii) a parabolic reflector, by discussing the advantages and drawbacks of each approach. The results presented within this paper can be used as a guideline for the development of advanced lighting systems based on laser diodes.

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“…Most papers in the literature are focused on the degradation processes induced by high temperatures and by current flow. [1][2][3][4][5][6][7][8] In contrast, only a few papers are on the investigation of degradation processes driven by the optical field, and all of them are focused on laser diodes, where the optical field is more intense and may lead to catastrophic optical damage. [9][10][11][12] Tests to reveal possible gradual degradation under moderate photon fluencies have never been carried out before, but they are crucial in understanding if photons, other than electrons (current) and phonons (temperature), may be a possible cause of degradation in GaN-based optoelectronic devices.…”

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confidence: 99%

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Santi

Caria

Renso

et al. 2018

Appl. Phys. Express

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We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation is excluded by stress tests under laser irradiation in the opencircuit configuration; any role of temperature is ruled out by additional thermal tests, showing a different degradation mode. Given the high bond strength of GaN, lattice-damage-related degradation is unlikely. A possible cause, supported by the PL spectra, is the dehydrogenation of gallium vacancies, which causes an increase in the number of optically active defects and requires a removal energy lower than the photon energy.

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Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

Cited by 15 publications

References 14 publications

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Laser-Based Lighting: Experimental Analysis and Perspectives

Evidence of optically induced degradation in gallium nitride optoelectronic devices

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