Thermal-vibrational amplitudes of silicon determined by channeling-radiation measurements

Kephart, J. O.; Berman, B. L.; Pantell, R. H.; Datz, S.; Klein, R.; Park, H.

doi:10.1103/physrevb.44.1992

Cited by 22 publications

(12 citation statements)

References 12 publications

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“…For silicon at room temperature we deduce a vibrational amplitude ϭ͑0.0790Ϯ0.0005͒ Å, which corresponds to a Debye temperature of ͑519.0Ϯ10.8͒ K. These values are consistent with other channeling radiation experiments, e.g., Kephart et al, 15 who derived a mean value ϭ͑0.0796 Ϯ0.0015͒ Å for an electron energy of 54.5 MeV and Hau et al, 16 who obtained ⌰ D ϭ(504Ϯ6) K. All channeling experiments yield substantially lower values for the Debye temperature than those derived from x-ray scattering at lower order reflections ͓͑543Ϯ8͒ K in Ref. 17 20 On the other hand, highprecision measurements 21 of electronic charge distribution in silicon based on very high order x-ray diffraction are interpreted by the authors in terms of significantly lower Debye temperatures than those derived by Ref.…”

Section: Discussionsupporting

confidence: 91%

Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

et al. 1997

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The temperature dependence of planar channeling radiation of 62.8 MeV electrons has been studied for silicon, germanium, and beryllium. The measurements have been performed using an uncollimated lowemittance cw beam from the superconducting electron linac S-DALINAC at the Technische Hochschule Darmstadt. Energies and linewidths of transitions between transverse bound states have been determined in the energy range between 40 and 230 keV for silicon and beryllium at temperatures between 12 and 330 K, and for germanium between 12 and 223 K. From the shift of the transition energies with temperature the mean thermal vibrational amplitudes of the atoms transverse to the channeling planes are determined by comparison with calculations using the many-beam formalism. Within experimental errors no directional dependence of the vibrations is observed. For silicon a Debye temperature of ͑535.2Ϯ8.5͒ K at 12 K and ͑519.0Ϯ10.8͒ K at 300 K has been derived. For germanium an increase from ͑232.7Ϯ12.8͒ K at 12 K to ͑292.0Ϯ16.4͒ K at 223 K is observed. Planar channeling radiation spectra from a beryllium crystal taken at 12, 220, and 300 K have been analyzed the same way yielding a Debye temperature of

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Section: Discussionsupporting

confidence: 91%

Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

et al. 1997

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“…In the Crystal-TRIM code a Debye temperature of 500 K is used. This value is in agreement with results of precise channeling radiation measurements of thermal vibrational amplitudes 18,19 The formula for the rms of thermal displacements shows that the temperature dependence of this quantity is particularly pronounced if the Debye temperature is relatively low, like in the case of silicon. For example, if under otherwise identical conditions a silicon carbide target with T D ϭ1120 K were to be used in low dose P implantation, the temperature dependence of the profile shape would be much smaller than that in the case of Si.…”

Section: Competing Influence Of Damage Buildup and Lattice Vibrationssupporting

confidence: 78%

Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

Posselt

Mäder

Grötzschel

et al. 2003

Applied Physics Letters

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“…During the flux of the channelled ions simulation in the pristine Si crystal, the vibration amplitude of u 1 = 0.813 nm for Si was used. 25 This method was also used in the study 26 for GaN.…”

Section: Introductionmentioning

confidence: 99%

Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions

Mikšová

Horák

Holý

et al. 2019

Surface & Interface Analysis

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A Si crystal layer on SiO2/Si was implanted using 0.4‐MeV Kr+, Ag+, and Au+ at ion fluences of 0.5 × 1015 to 5.0 × 1015 cm−2. Subsequent annealing was performed at temperatures of 450° and 800° for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena; therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS‐C) conditions using an incident beam of 2‐MeV He+ from a 3‐MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X‐ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS‐C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.

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Thermal-vibrational amplitudes of silicon determined by channeling-radiation measurements

Cited by 22 publications

References 12 publications

Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions

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