Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

Posselt, M.; Mäder, Michael; Grötzschel, R.; Behar, M.

doi:10.1063/1.1594281

Cited by 10 publications

(10 citation statements)

References 18 publications

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“…Nondestructive experimental measurements of the detector noise are obtained using a 57 Co calibration radionuclide, emit ting characteristic Fe K α and K β Xray photons at 6.40 keV and 7.06 keV, respectively. Upon absorption inside the active detector volume, an Xray photon excites a number of e-h pairs proportional to its energy.…”

Section: Detection Of Induced Charge Signalsmentioning

confidence: 99%

“…A threshold q t is delineated here, where better than 99.99% of the cumulative noise N(q t ) (blue area) is discarded by a lower-level discriminator in the data acquisition electronics. The inset shows the 55 Fe X-ray K-emission lines of a 57 Co radionuclide, acquired with all system components activated, including the AFM itself. A resolution of about 200 eV FWHM for the 6.4 keV K α peak acquired at a substrate temperature of 263 K verifies negligible signal degradation from cross-talk from the AFM system.…”

Section: Detection Of Induced Charge Signalsmentioning

confidence: 99%

“…These light ions with a high electronic stopping fraction confirm 100% charge collection efficiency of the detector. The channel-to-charge calibration of the q-axis was initially done using a 57 Co radionuclide. Construction site 1 was exposed to the ion beam to acquire 10 000 signal events s(q) + n(q) over a period of 1,039 s and with the discriminator threshold reduced to q t = 0.4 keV.…”

Section: Deterministic Ion Implantationmentioning

confidence: 99%

“…From this, it is possible to simulate the energies and directions of a population of P ions transmitted through the oxide layer and of the recoiled Si and O atoms which are directed into the underlying (100) Si. In the second step, the code Crystal-TRIM [57][58][59] is employed to obtain the electronic energy loss per P ion in the population within the underlying Si. This quantity corresponds to the signal measured by the detector.…”

Section: Nonoise T0mentioning

confidence: 99%

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Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

et al. 2021

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to new applications arising from the control of single charges and spins on individual dopants in silicon. Promi sing applications are where the donors function as quantum bits (qubits). How ever, configuring materials with arrays of single donor qubits in the solid state is a formidable challenge. It has been proposed that noisy, intermediatescale quantum (NISQ) [1] devices with ≈50-100 qubits can surpass classical supercom puters in executing some specific algo rithms. [2] Even for NISQ devices, the error budgets for the physical qubits are strict, requiring errors well below 1% in order to achieve sufficient circuit depths. Beyond NISQ, errorcorrected, universal quantum processors of the kind necessary to run Shor's factoring algorithm on a 2000 bit classical key will require upwards of 4000 logical qubits. Using a 2D surface code architecture, this would translate to about 200 mil lion physical qubits with present error rates of around 0.1%. [3] Future devices with lower error rates [4] will reduce the required number of physical qubits. The surface code is also able to tolerate 5-10% physically nonfunctional (absent or faulty) qubits in the architecture. [5,6] Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For example, group-V donors implanted in isotopically purified 28 Si crystals are attractive for large-scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31 P, hyperfine clock transitions in 209 Bi or electrically controllable 123 Sb nuclear spins. Promising architectures require the ability to fabricate arrays of individual near-surface dopant atoms with high yield. Here, an on-chip detector electrode system with 70 eV root-mean-square noise (≈20 electrons) is employed to demonstrate near-room-temperature implantation of single 14 keV 31 P + ions. The physics model for the ion-solid interaction shows an unprecedented upper-bound single-ion-detection confidence of 99.85 ± 0.02% for near-surface implants. As a result, the practical controlled silicon doping yield is limited by materials engineering factors including surface gate oxides in which detected ions may stop. For a device with 6 nm gate oxide and 14 keV 31 P + implants, a yield limit of 98.1% is demonstrated. Thinner gate oxides allow this limit to converge to the upper-bound. Deterministic single-ion implantation can therefore be a viable materials engineering strategy for scalable dopant architectures in silicon devices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202103235.

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Section: Detection Of Induced Charge Signalsmentioning

confidence: 99%

Section: Detection Of Induced Charge Signalsmentioning

confidence: 99%

Section: Deterministic Ion Implantationmentioning

confidence: 99%

Section: Nonoise T0mentioning

confidence: 99%

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Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

et al. 2021

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“…As described in a review article by Valbusa et al [8], subsequently, many groups picked up these investigations-not only with (reactive) ion-beam machines, but also with (reactive) ion etching (RIE). Those investigations were usually not performed with amorphous glass, but rather for semiconductors or even metals [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The phenomenon observed and described in all of these publications is self-organization due to two compensating effects, which together stabilize the surface profile: first a tendency of surface structure shrinkage due to a preferred etch erosion at oblique flanks and secondly diffusion of the eroded particles into the etched depressions 2 Advances in OptoElectronics and adsorption.…”

Section: Introductionmentioning

confidence: 99%

nm- andμm-Scale Surface Roughness on Glass with Specific Optical Scattering Characteristics on Demand

Fouckhardt

Steingoetter

Brinkmann

et al. 2007

Advances in OptoElectronics

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During maskless ion etching of amorphous glass, self-organization can arise in certain etch parameter ranges, which leads to dense-lying dots/cones with typical diameters and heights in the 30-300 nm range. Another phenomenon, which results in cone sizes around 1 μm or more, is self-masking especially in the case of heterogeneous glasses like borosilicate glass as used in this contribution. Thus, a wide range of characteristic sizes and shapes of individual scatterers on the glass surface, jointly acting as a defined roughness, can be achieved resulting in specific optical scattering characteristics. This contribution gives results on borosilicate thin-glass dry etching. Certain surface morphologies are reported together with experimental results on their optical scattering characteristics.

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Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

Jakob,

Robson,

Firgau

et al. 2024

Advanced Materials

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Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry‐standard metal‐oxide‐semiconductor (MOS) processes. This applies also to ion‐implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale‐up donor‐based quantum computers. 31PF2 molecule implants are used to triple the placement certainty compared to 31P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as 123Sb and 209Bi, which represent high‐dimensional qudits for quantum information processing, while Sb2 molecules enable deterministic formation of closely‐spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step‐and‐repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor‐based quantum computers in silicon.

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Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

Abstract: High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The transprojected-range effect

Cited by 10 publications

References 18 publications

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

nm- andμm-Scale Surface Roughness on Glass with Specific Optical Scattering Characteristics on Demand

Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

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