Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Abstract

Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures J. Appl. Phys. 112, 053718 (2012) The inter-sublevel optical properties of a spherical quantum dot-quantum well with and without a donor impurity J. Appl. Phys. 112, 053717 (2012) Observation of a 0.5 conductance plateau in asymmetrically biased GaAs quantum point contact Appl. Phys. Lett. 101, 102401 (2012) Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires Appl.

Enhanced thermal stability of the two-dimensional electron gas in GaN∕AlGaN∕GaN heterostructures by Si3N4 surface-passivation-induced strain solidification

“…5,8,11 There have been few reports about the thermal stability of AlGaN / GaN heterostructures. 12,13 It was found that the HEMT channel temperature increases rapidly with dissipated power and, at 6 W / mm, the temperature reaches ϳ320°C for sapphire substrate. 14 Investigation into the thermal stability of AlGaN / GaN heterostructures is desirable for further device applications.…”

Temperature‐dependent microwave noise performances of AlGaN/GaN HEMTs with post‐gate annealing

“…Recently, in the process of investigation of the thermal stability of Schottky contacts on AlGaN/GaN heterostructures, we demonstrated that post-Schottky-metallization annealing in furnace under certain conditions can increase the Schottky barrier height and reduce the reverse leakage current of Ni Schottky diodes for more than three orders of magnitude [12]. When the same technique was applied to AlGaN/GaN HEMTs, we demonstrated that by using the optimized conditions, the device breakdown voltage, the cut-off frequency (f T ), the maximum oscillation frequency (f max ), and output power can be greatly improved after the post-gate-annealing (PGA) [13].…”

The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

“…Recently, during the investigation of thermal stability of Schottky contacts on AlGaN/GaN heterostructures, we demonstrated that post gate annealing under certain conditions could increase the Schottky barrier height and reduce the reverse leakage current of Ni Schottky diodes for more than three orders of magnitude [9]. For HEMT devices, we demonstrated that post Schottky gate annealing technique could improve the device breakdown voltage, unit currentgain frequency (f T ), maximum power frequency (f max ) and output power [10].…”