Thermal stability of RuO2 thin films prepared by modified atomic layer deposition

Kim, Jin-Hyock; Ahn, Ji‐Hoon; Kang, Sang‐Won; Roh, Jae–Sung; Kwon, Se‐Hun; Kim, Ja-Yong

doi:10.1016/j.cap.2012.02.050

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…Consistent with the findings of a previous report, decreased oxygen signals at both the top and bottom interfaces can be observed. This phenomenon can be attributed to the reduction of RuO 2 to Ru during the annealing process (Figure S7 of the Supporting Information). , Thus, interfacial oxygen can diffuse from the RuO 2 electrode to the ferroelectric ZrO 2 layer and suppress the V O formation in ZrO 2 . As a result, the trap-assisted leakage current in ZrO 2 can be reduced. , It can be concluded from Figures and that the ferroelectricity of the RuO 2 /ZrO 2 (∼8 nm)/RuO 2 sample can be further enhanced by increasing the ferroelectric o-phase fraction, such as through electric field cycling.…”

Section: Resultsmentioning

confidence: 91%

“…This phenomenon can be attributed to the reduction of RuO 2 to Ru during the annealing process (Figure S7 of the Supporting Information). 53,54 Thus, interfacial oxygen can diffuse from the RuO 2 electrode to the ferroelectric ZrO 2 layer and suppress the V O formation in ZrO 2 . 37 As a result, the trap-assisted leakage current in ZrO 2 can be reduced.…”

Section: Microstructure Analysismentioning

confidence: 99%

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Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Wang,

Guan,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the information storage and processing performances of ferroelectric ZrO2-based nonvolatile devices remain open for further exploration. Here, a ZrO2 (∼8 nm)-based ferroelectric capacitor using RuO2 oxide electrodes is fabricated, and the ferroelectric orthorhombic phase evolution under electric field cycling is studied. A ferroelectric remnant polarization (2P r) of >30 μC/cm2, leakage current density of ∼2.79 × 10–8 A/cm2 at 1 MV/cm, and estimated polarization retention of >10 years are achieved. When the ferroelectric capacitor is connected with a transistor, a memory window of ∼0.8 V and eight distinct states can be obtained in such a ferroelectric field-effect transistor (FeFET). Through the conductance manipulation of the FeFET, a high object image recognition accuracy of ∼93.32% is achieved on the basis of the CIFAR-10 dataset in the convolutional neural network (CNN) simulation, which is close to the result of ∼94.20% obtained by floating-point-based CNN software. These results demonstrate the potential of ferroelectric ZrO2 devices for nonvolatile memory and artificial neural network computing.

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Section: Resultsmentioning

confidence: 91%

Section: Microstructure Analysismentioning

confidence: 99%

Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Wang,

Guan,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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“…Previous reports on ALD of RuO 2 employed organometallic precursors such as bis(cyclopentadienyl) Ru(II) [RuCp 2 ], bis(ethylcyclopentadienyl) Ru(II) [Ru(EtCp) 2 ], ,,,,, and bis(2,2,6,6-tetramethyl-3,5-heptanedinonato)(1,5-cyclooctadiene) Ru(III) [Ru(thd)2(cod)], the most commonly used precursor being [Ru(EtCp) 2 ]. Recent reports make use of zero-valent ruthenium complexes like (1,5-hexadiene)(1-isopropyl-4-methylbenzene)ruthenium, (η4-2,3-dimethylbutadiene)(tricarbonyl)ruthenium, and (ethylbenzene)(1,3-butadiene)ruthenium .…”

Section: Introductionmentioning

confidence: 99%

“…40−50 Among those techniques to prepare RuO 2 thin films, ALD offers uniform and conformal growth over three-dimensional substrates without compromising the precise control over thickness and composition. 51−53 Previous reports on ALD of RuO 2 employed organometallic precursors such as bis(cyclopentadienyl) Ru(II) [RuCp 2 ], 48 bis(ethylcyclopentadienyl) Ru(II) [Ru(EtCp) 2 ], 43,46,47,50,54,55 and bis(2,2,6,6-tetramethyl-3,5-heptanedinonato) ( tadiene) Ru(III) [Ru(thd)2(cod)], 56 the most commonly used precursor being [Ru(EtCp) 2 ]. Recent reports make use of zero-valent ruthenium complexes like (1,5-hexadiene)(1isopropyl-4-methylbenzene)ruthenium, 4 0 (η4-2,3dimethylbutadiene)(tricarbonyl)ruthenium, 4 1 and (ethylbenzene)(1,3-butadiene)ruthenium.…”

Section: ■ Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Ruthenium Dioxide Based on Redox Reactions between Alcohols and Ruthenium Tetroxide

et al. 2022

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Atomic layer deposition (ALD) of ruthenium dioxide (RuO2) thin films using metalorganic precursors and O2 can be challenging because the O2 dose needs to be precisely tuned and significant nucleation delays are often observed. Here, we present a low-temperature ALD process for RuO2 combining the inorganic precursor ruthenium tetroxide (RuO4) with alcohols. The process exhibits immediate linear growth at 1 Å/cycle when methanol is used as a reactant at deposition temperatures in the range of 60–120 °C. When other alcohols are used, the growth per cycle increases with an increasing number of carbon atoms in the alcohol chain. Based on X-ray photoelectron spectroscopy (XPS) and conventional X-ray diffraction, the deposited material is thought to be amorphous RuO2. Interestingly, pair distribution function (PDF) analysis shows that a structural order exists up to 2–3 nm. Modeling of the PDF suggests the presence of Ru nanocrystallites within a predominantly amorphous RuO2 matrix. Thermal annealing to 420 °C in an inert atmosphere crystallizes the films into rutile RuO2. The films are conductive, as is evident from a resistivity value of 230 μΩ·cm for a 20 nm film grown with methanol, and the resistivity decreased to 120 μΩ·cm after crystallization. Finally, based on in situ mass spectrometry, in situ infrared spectroscopy, and in vacuo XPS studies, an ALD reaction mechanism is proposed, involving partial reduction of the RuO2 surface by the alcohol followed by reoxidation of the surface by RuO4 and concomitant deposition of RuO2.

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“…Many processes for RuO2 thin films have been developed like sol-gel, magnetron sputtering, atom laser deposition, etc. [14], [23], [24].…”

Section: Introductionmentioning

confidence: 99%

Temperature Effect Analysis of the Enzymatic RuO₂ Biomedical Sensor for Ascorbic Acid Detection

Kuo

Lai

Chang

et al. 2022

IEEE J. Electron Devices Soc.

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The temperature effect has been discussed in the past on pH sensors. In this study, the temperature effect is analyzed for the ascorbic acid (AA) biosensor based on enzymatic ascorbate oxidase (AO). To reduce this effect, a novel temperature compensation circuit was implemented by Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC) 180 nm complementary metal-oxide-semiconductor (CMOS) process. By applying the proposed circuit, the temperature coefficients (TCs) with five concentrations of AA were suppressed below 201 μV/°C. The TC of the normal level of AA concentration (0.0312 mM) in the human body was 188 μV/°C, at the temperature range from 25°C to 55°C. The polyethylene terephthalate (PET) substrate was utilized. To confirm the stability of the fabricated AO/RuO2/PET AA biosensor, interference and hysteresis experiments were carried out. At present, the experiments were still in the stage of in vitro measurement. The results showed that the AO/RuO2/PET AA biosensor had good selectivity that effective against other interference that may exist in blood at either 25 °C or 37.5 °C. Moreover, at the temperature of 37.5 °C, the hysteresis voltage of the biosensor after applying the compensation circuit was reduced from 18.27 mV to 1.39 mV.

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Thermal stability of RuO2 thin films prepared by modified atomic layer deposition

Cited by 11 publications

References 9 publications

Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Atomic Layer Deposition of Ruthenium Dioxide Based on Redox Reactions between Alcohols and Ruthenium Tetroxide

Temperature Effect Analysis of the Enzymatic RuO₂ Biomedical Sensor for Ascorbic Acid Detection

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Thermal stability of RuO2 thin films prepared by modified atomic layer deposition

Cited by 11 publications

References 9 publications

Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Atomic Layer Deposition of Ruthenium Dioxide Based on Redox Reactions between Alcohols and Ruthenium Tetroxide

Temperature Effect Analysis of the Enzymatic RuO2 Biomedical Sensor for Ascorbic Acid Detection

Contact Info

Product

Resources

About

Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing

Temperature Effect Analysis of the Enzymatic RuO₂ Biomedical Sensor for Ascorbic Acid Detection