Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing
Zijian Wang,
Zeyu Guan,
He Wang
et al.
Abstract:The recent discovery of ferroelectricity
in pure ZrO2 has drawn much attention, but the information
storage and processing
performances of ferroelectric ZrO2-based nonvolatile devices
remain open for further exploration. Here, a ZrO2 (∼8
nm)-based ferroelectric capacitor using RuO2 oxide electrodes
is fabricated, and the ferroelectric orthorhombic phase evolution
under electric field cycling is studied. A ferroelectric remnant polarization
(2P
r) of >30 μC/cm2,
leakage current density of ∼2.79 × 10–8 A/cm2 at … Show more
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