Thermal stability of nonstoichiometric silicon nitride films made by reactive dc magnetron sputter deposition

Löbl, H.P.; Huppertz, M.

doi:10.1016/s0040-6090(97)00512-9

Cited by 21 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the nonstoichiometric AlSiN films, the nitrogen amount it is not sufficient to fill all the positions in the non-metallic sublattice. Thus, Al and Si atoms occupy sites on the non-metallic sublattice, and the presence of Al Al, Al Si and Si Si bonds leads to a lower chemical and thermal stability [35,39]. This non stoichiometry is the main reason for the weaker thermal stability of samples SAON2 and SAON3.…”

Section: Discussionmentioning

confidence: 99%

Solar selective absorbing coatings based on AlSiN/AlSiON/AlSiO y layers

Rebouta

Sousa

Andritschky

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Coatings with a double absorbing layer based on AlSiN/AlSiON were deposited on stainless steel substrates by magnetron sputtering technique, with different Al:Si ratios. A tungsten layer was used as a back reflector and AlSiO y or SiO x thin films were used as antireflection top layers. Prior the structure design, several single layers were deposited on glass substrates by varying the reactive gases flows, which allowed the stacking of a series of layers with different optical properties. Experimental transmittance and reflectance were modelled for the assessment of the spectral optical constants, which were then used to design a coating stack with optimized solar absorptance and thermal emittance. Optical properties, microstructure, morphology, composition and chemical bonding were investigated by employing optical spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The samples were annealed in air at 400 • C and vacuum at 580 • C with the purpose to evaluate their oxidation resistance and thermal stability, which was subsequently correlated with the Al:Si ratio. Optimum results were achieved for an Al:Si ratio of 2.3:1, whereas for significantly higher Si content resulted in detrimental performance. The solar absorbance and thermal emittance for the optimized multilayer selective coatings is 93-94% and 7-10% (at 400 • C), respectively.

show abstract

Section: Discussionmentioning

confidence: 99%

Solar selective absorbing coatings based on AlSiN/AlSiON/AlSiO y layers

Rebouta

Sousa

Andritschky

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…On the other hand, sputter-deposition using a ceramic Si 3 N 4 target or a polycrystalline Si target in combination with a nitrogen-rich plasma are also viable alternatives. Typically, a radiofrequency (RF) discharge is applied for synthesis [10][11][12][13][14], but given a sufficient electrical conductivity of the target, direct-current (DC) magnetron sputtering is also a feasible approach [15,16].…”

Section: Introductionmentioning

confidence: 99%

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

et al. 2015

View full text Add to dashboard Cite

“…[6][7][8][9] Silicon nitride films can be prepared by a variety of methods such as low-pressure chemical vapor deposition (LPCVD), 10,11 plasma-enhanced CVD (PECVD), 12,13 pulsed laser ablation, 14 reactive evaporation, 15 and sputtering. 16,17 Conventionally, high-quality stoichiometric silicon nitride films are obtained by the LPCVD process at temperatures in excess of 700°C. To realize MEMS on the same silicon chip, it is a requirement to integrate the control electronic circuits, usually based on complementary metaloxide-semiconductor (CMOS) technology, with the sensor/actuator/mirror fabrication processing.…”

Section: Introductionmentioning

confidence: 99%

“…Many researchers have reported the deposition of silicon nitride by the RF-sputtering process. [16][17][18][19][20] Silicon nitride deposited by LPCVD and PECVD is widely used as a structural material in the fabrication of different MEMS devices, such as static membranes, tunable inductors, and tunable MEMS Fabry-Pérot optical filters. [6][7][8][9]21,22 However, sputtered silicon nitride has not yet been explored as a structural layer in MEMS.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Bhatt

Chandra

2009

Journal of Elec Materi

View full text Add to dashboard Cite

In the present work, we report silicon nitride films deposited by a radiofrequency (RF) sputtering process at relatively low temperatures (<260°C) for microelectromechanical system (MEMS) applications. The films were prepared by RF diode sputtering using a 3-inch-diameter Si 3 N 4 target in an argon ambient at 5 mTorr to 20 mTorr pressure and an RF power of 100 W to 300 W. The influence of the film deposition parameters, such as RF power and sputtering pressure, on deposition rate, Si-N bonding, surface roughness, etch rate, and stress in the films was investigated. The films were deposited on single/double-side polished silicon wafers and transparent fused-quartz substrates. To explore the RF-sputtered silicon nitride film as a structural material in MEMS, microcantilever beams of silicon nitride were fabricated by bulk, surface, and surface-bulk micromachining technology. An RF-sputtered phosphosilicate glass film was used as a sacrificial layer with RF-sputtered silicon nitride. Other applications of sputtered silicon nitride films, such as in the local oxidation of silicon (LOCOS) process, were also investigated.

show abstract

Thermal stability of nonstoichiometric silicon nitride films made by reactive dc magnetron sputter deposition

Cited by 21 publications

References 8 publications

Solar selective absorbing coatings based on AlSiN/AlSiON/AlSiO y layers

Solar selective absorbing coatings based on AlSiN/AlSiON/AlSiO y layers

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Contact Info

Product

Resources

About