Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

Mastro, M. A.; Kryliouk, O.; Reed, M. D.; Anderson, Timothy J.; Davydov, Albert V.; Shapiro, Alexander J.

doi:10.1002/1521-396x(200111)188:1<467::aid-pssa467>3.0.co;2-1

Cited by 34 publications

(18 citation statements)

References 11 publications

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“…Using a NH 3 containing atmosphere is closer to the growth conditions in the MOCVD reactor and can help to stabilize the surface. However, at the same time highly reactive hydrogen can damage the surface; etching effects were observed for heat treatment of GaN in NH 3 at temperatures above 800 ºC [5]. Emission properties can also be influenced by incorporated hydrogen.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Lorenz¹,

Nogales

Nédélec

et al. 2005

MRS Proc.

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GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ºC in vacuum, in flowing nitrogen gas or a mixture of NH 3 and N 2 . Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N 2 already show the first signs of surface dissociation at 1000 ºC. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH 3 +N 2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 ºC in NH 3 +N 2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

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Section: Introductionmentioning

confidence: 99%

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Lorenz¹,

Nogales

Nédélec

et al. 2005

MRS Proc.

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“…Similar results were reported earlier in [9] where a rougher surface of bulk GaN was observed after the annealing with pure H 2 at similar temperatures. Mastro et al also performed annealing of HVPE GaN layers with H 2 at different temperatures [11]. It was found that the decomposition of GaN layers started to take place at about 800 °C, via the following reaction:…”

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confidence: 99%

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Lai

Johnson

Paskova

et al. 2009

Phys. Status Solidi (c)

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The surface of HVPE grown GaN substrates were treated with two different polishing procedures. Both procedures were successful in producing highly smooth and featureless surfaces. However, subsurface damage was observed in the sample treated by one of the procedures. The subsurface damage was revealed by cathodoluminescence (CL) spectroscopy imaging but was not visible by scanning electron microscopy (SEM) or Atomic force microscopy (AFM). Thermal annealing at 950 °C with different gases was performed in an attempt to remove subsurface damages. Annealing in gas mixtures containing H2 increased both the presence of surface scratches and overall surface roughness. On the other hand, annealing in mixtures of NH3 and N2 (with no H2) led to the surfaces with significantly reduced subsurface damage. The surface roughness and optical properties of the sample after the annealing with such gas mixtures were slightly sacrificed. In order to evaluate subsurface damage depth, CL images were taken from the annealed surface for different acceleration voltages. The results suggest that the observed subsurface damages were within 1.48 μm of the surface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…A proposed process flow of vertical GaN SBD has been shown in Figure 11, which is similar to the literature [84]. The GaN epilayer was subsequently grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) [85]. In Figure 11a, the contact metal was deposited on GaN epilayer.…”

Section: Fabrication Steps Of Vertical Gan Sbdsmentioning

confidence: 93%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

Cited by 34 publications

References 11 publications

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

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