Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Sun, Yue; Kang, Xiaoning; Zheng, Yingkui; Jiang, Lu; Tian, Xing; Ke, Wei; Wu, Hao; Wang, Wenbo; Liu, Xinyu; Zhang, Guoqi

doi:10.3390/electronics8050575

Cited by 73 publications

(39 citation statements)

References 82 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition to the conventional GaN self-standing substrate, epitaxial growth can be carried out on lower-cost and larger-scale foreign substrates (e.g., silicon, sapphire). Therefore, quasi-vertical structures are considered a promising candidate for future GaN-based vertical power devices [4], as shown in Figure 1a,b.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

et al. 2020

Self Cite

View full text Add to dashboard Cite

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.

show abstract

Section: Introductionmentioning

confidence: 99%

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Usually, the Cl 2 /Ar based plasma shows correct results such as high etch rates, anisotropic profile and a smooth surface of homogeneous GaN [23,24]. 2021, 8, x FOR PEER REVIEW 2 of 7 and microelectromechanical system devices for device isolation, waveguide or vertical channel formation [13][14][15]. Low etch depth has been successfully employed for InGaN/GaN devices to create photonics crystal and LED mesas with, in general, etch depths below 1um, while deep etch has been mainly focused on GaN materials and not actual devices.…”

Section: Methodsmentioning

confidence: 99%

“…In the actual context of photonic devices, requirements for GaN etching are fixed in the order of few hundred nanometers [7][8][9], whereas this is completely different for those expected for vertical power devices [10][11][12]. Deep etching of GaN is presently needed for new applications such as photonic, power and microelectromechanical system devices for device isolation, waveguide or vertical channel Photonics 2021, 8, 68 2 of 7 formation [13][14][15]. Low etch depth has been successfully employed for InGaN/GaN devices to create photonics crystal and LED mesas with, in general, etch depths below 1um, while deep etch has been mainly focused on GaN materials and not actual devices.…”

Section: Introductionmentioning

confidence: 99%

Development of Micron Sized Photonic Devices Based on Deep GaN Etching

et al. 2021

View full text Add to dashboard Cite

In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry etching of an InGaN/GaN heterogeneous structure was investigated by using an inductively coupled plasma reactive ion etching (ICP-RIE). We considered different combinations of etch mask (Ni, SiO2, resist), focussing on the optimization of the deep etching process. A GaN mesa process with an etching depth up to 6 µm was performed in Cl2/Ar-based plasmas using ICP reactors for LEDs dimen sions ranging from 5 to 150 µm². Our strategy was directed toward the mesa formation for vertical-type diode applications, where etch depths are relatively large. Etch characteristics were studied as a function of ICP parameters (RF power, chamber pressure, fixed total flow rate). Surface morphology, etch rates and sidewall profiles observed into InGaN/GaN structures were compared under different types of etching masks. For deep etching up to few microns into the GaN template, we state that a Ni or SiO2 mask is more suitable to obtain a good selectivity and vertical etch profiles. The optimized etch rate was about 200nm/min under moderate ICP conditions. We applied these conditions for the fabrication of micro/nano LEDs dedicated to LiFi applications.

show abstract

“…For practical applications, diodes are essential components for power conversion and inversion [25]. With the distinct material properties of GaN, GaN-based diodes (SBDs and PNDs) exhibit notable performances, which are expected to satisfy the requirements of power applications.…”

Section: Pnd Versus Sbdmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

show abstract

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Cited by 73 publications

References 82 publications

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

Development of Micron Sized Photonic Devices Based on Deep GaN Etching

Review of Recent Progress on Vertical GaN-Based PN Diodes

Contact Info

Product

Resources

About