Thermal stability of ion-implanted hydrogen in ZnO

Abstract

Articles you may be interested inEffect of implanted species on thermal evolution of ion-induced defects in ZnO

Optical observation of donor-bound excitons in hydrogen-implanted ZnO

“…2 a significant decrease in the PL intensity was observed following the He implantation, consistent with previous reports on the highly irradiated ZnO. 6,7 However, the relative intensity of the PL peaks remained unchanged and the peak at 3.364 eV still exhibited the maximum intensity.…”

“…This is the significant difference between our study and previous work regarding the effect of H implantation in ZnO. 6,7 Due to the high implantation energies ranging from 100 keV to 1 MeV in previous studies, the implanted H resided much deeper than the optically active region and showed only the effect of implantation induced damage on the optical properties of ZnO. Half of the hydrogen-implanted samples were annealed in vacuum at 300°C for 15 min.…”

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

“…This is in sharp contrast to 2 H in GaN, where much higher temperatures (у800°C) are needed to evolve the deuterium out of the sample. 22,23 To compare these data to the thermal stability of 2 H incorporated by direct implantation, 18 Fig. 3 shows the percentage of 2 H remaining ͑measured by SIMS͒ as a function of annealing temperature for incorporation by either plasma exposure or implantation.…”

“…Recently, there has been much interest in the properties of hydrogen in ZnO and related oxides. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Theoretical predictions suggest that interstitial atomic hydrogen will introduce a shallow donor state in ZnO, [1][2][3][4] and this assertion is supported by some experimental data for its muonium counterpart, 5,6 by electron paramagnetic resonance data of bulk single crystals 7 and by the fact that hydrogen can lead to electron conduction in other wide-band-gap oxides such as SnO. 19 In addition, the presence of hydrogen in the growth or processing ambient can significantly affect the electrical and optical properties of ZnO, [9][10][11][12][13][14][15][16][17][18] but there is little systematic data available on its diffusivity and thermal stability when introduced by different methods.…”

Bulk, interface and surface properties of zinc oxide

“…For instance, it is true that hydrogen impurities form very shallow donor levels, but it is also true that the hydrogen in ZnO is not thermally stable. 35) Therefore, the conductivity of ZnO quenched from high temperatures is not easily explained as due to hydrogen impurities. A serious hazard for investigations of the effects of defects in ZnO is impurities in the source materials.…”