Thermal stability of back side metallization multilayer for power device application

Ito, Takeshi; Taguchi, Isamu; Soga, Masayasu; Mitsuhashi, Masahiko; Shinohara, Takayuki; Ogashiwa, Toshinori; Nishimori, T.; Akiyama, Nobuyuki

doi:10.1016/j.microrel.2011.07.094

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…2a shows the forces needed to shear the small (2*2mm) dies off the copper substrate. Shear forces are generally quite high, comparable to Au sintered sample [4]. Interestingly the difference in shear strength for different metallizations after a high number of cycles is diminishingly small.…”

Section: Thermal Shocksmentioning

confidence: 77%

“…On one hand a high thermal budget promotes carbon diffusion and segregation. Additionally the thermal budget might lead to unwanted reactions within the metallization and thus degrade the contact resistance and adhesion [4]. On the other hand high temperature swings lead to high mechanical stresses and to a propagation of cracks especially along interfaces with insufficient adhesion.…”

Section: Introductionmentioning

confidence: 99%

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Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Sünner

Behrens

Kaden

2013

MSF

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The reliability of silicon carbide vertical DMOS drain metallizations was investigated using conditions close to a possible application setup. We monitored the adhesion of silicon carbide dies with different contacts and metallizations that were silver-sintered to a copper substrate. The temperature range in an anticipated automobile application ranges between -40°C and 250°C and the reliability tests were performed for temperature dwelling at 250°C in air and temperature swings between -40°C and 200°C.

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Section: Thermal Shocksmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Sünner

Behrens

Kaden

2013

MSF

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“…15,16 Vacuum annealing of thermally grown oxide was performed at a temperature of 350 C for 30 min. Inc., USA.…”

Section: Methodsmentioning

confidence: 99%

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Kumar

Maan

Akhtar

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky diode based temperature sensor, equipped with floating metal guard ring and oxide field plate as edge terminations in low current regime, i.e., ranging from 1 nA to 5 pA. Various measurements were carried out at temperatures ranging from 233 K to 473 K in steps of 20 K. An imperative outcome of the present study, which is in contrast with the theory, is that there exists an anomaly in the device thermal sensitivity behaviour after a range of current. The thermal sensitivity of the fabricated device, calculated from the slope of forward voltage versus temperature plot, was found to be varied from 3.11 mV/K at 1 nA to 3.32 mV/K at 5 pA with standard error of 60.03 mV/K. A detailed analysis of I-V-T characteristics by taking into account all the possibilities for variation in the barrier height and the ideality factor with temperature emphasizes that there exist barrier height inhomogeneities at the metal-semiconductor interface in the fabricated device. These observations indicate that anomaly in the device thermal sensitivity was due to the barrier height inhomogeneities present in the device.

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“…An Au paste (AuRoFUSETM TR-191R, Tanaka Kikinzoku Kogyo K. K.) including sub-micron Au particles is used as the bonding material in this work [6]. A SiC-SBD (2.1 × 2.1 mm 2 in area and 0.37 mm-thick) was used.…”

Section: A Bonding Process With Au Pastementioning

confidence: 99%

Development of SiC power module for high-speed switching operation

Sato

Kato

Nakagawa

et al. 2013

2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS)

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In this work, SiC power module with sandwich structure is fabricated for high-speed switching operation at high temperature. A module structure of SiC power devices are sandwiched between two silicon nitride-active metal brazed copper circuit boards. To make a precise position and height control of the chip bonding, the top side (gate/source or anode pad side) of SiC power devices are flip-chip bonded to circuit electrodes using sub-micron Au particle with low temperature (250°C) and pressure-less sintering. The accuracy of the bonding position of chips was less than 10 μm and the accuracy of the height after bonding chips was less than 15 μm. The flip-chip bonding of SiC-JFET is successfully realized on the substrate without short or open failure electrically. Finally we joint the backside of the SiC-JFET (drain side) and the SiC-SBD (cathode side) to each circuit electrodes at once by means of reflow process with Au-12%Ge solder. Since the sandwitch module showed no fatigue afetr 500 times thermal cycle test between -40°C and 250°C and showed properly operation. The circuit operation of the module is confirmed by a double pulse-switching test.

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Thermal stability of back side metallization multilayer for power device application

Cited by 8 publications

References 21 publications

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Development of SiC power module for high-speed switching operation

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